Sensing environmental parameter through stress induced in IC

• US 8,872,290 B2
• Filed: 07/30/2009
• Issued: 10/28/2014
• Est. Priority Date: 08/01/2008
• Status: Active Grant

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: NXP B.V. (NXP Semiconductors NV)
• Inventors: Hoofman, Romano, Pijnenbrug, Remco Henricus Wilhelmus, Ponomarev, Youri Victorovitch
• Primary Examiner(s): SANDVIK, BENJAMIN P
• Application Number:
  US13/057,075
• Publication Number:
  US 20110127627A1
• Time in Patent Office: 1,916 Days
• US Class Current: 257/418
• CPC Class Codes: G01D 5/183 Sensing rotation or linear movement using strain, force or pressure sensors

Abstract

A sensor is provided for sensing a value of a physical parameter characteristic of the sensor'"'"'s environment. The sensor is implemented in semiconductor technology. A behavior of the sensor'"'"'s electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The stress is caused by the film'"'"'s material, whose dimensions depend on a value of the parameter. This dependence is different from the 5 dependence of the circuitry'"'"'s substrate on the same parameter.

Claims

1. A device comprising a sensor for sensing a value of a physical parameter indicative of an environment of the sensor, wherein:

the sensor comprises an integrated electronic circuit that includes a functional component of the integrated electronic circuit;

the sensor comprises means for affecting a magnitude of a global strain in a substrate of the integrated electronic circuit in dependence on the value of the physical parameter;

the means comprises a layer structurally coupled with the integrated electronic circuit and having a first coefficient of expansion with a first dependence on the physical parameter;

a second coefficient of expansion of the substrate has a second dependence on the physical parameter;

the first dependence is different from the second dependence;

the global strain determines an electrical property of the functional component of the integrated electronic circuit;

the integrated electronic circuit is operative to generate an output signal representative of the electrical property; and

the layer is operative to induce the global strain in the substrate the device further comprising;

a pre-metal dielectric layer formed over the substrate, over the functional component of the integrated electronic circuit, and over the layer;

metal contacts, formed on top of the pre-metal dielectric layer, which provide electrical connections to the functional component of the integrated electronic circuit; and

one or more features through the pre-metal dielectric layer to the layer so as to give the environment access to the layer.

2. The device of claim 1, wherein the physical parameter is one of:

a temperature;

acidity;

a characteristic of incident light;

humidity; and

a concentration of a chemical substance.

3. The device of claim 1, accommodated in a transponder.

4. The device of claim 3, wherein the transponder comprises an RFID tag.

5. The device of claim 1, comprising further electronic circuitry, wherein:

the sensor is configured for supplying a signal to the further electronic circuitry in dependence on the value sensed.

6. The device of claim 5, wherein the further circuitry is configured for processing the signal from the sensor.

7. The device of claim 6, wherein the processing comprises controlling operation of the further electronic circuitry in dependence on the value sensed.

8. The device of claim 1, wherein the one or more features comprises a ring-shaped feature to provide access to the layer.

9. The device of claim 1, wherein the functional component is a field effect transistor (FET) having a source, a drain, and a gate, wherein the layer is formed completely over the transistor, and wherein the one or more features access the layer above the source and drain of the transistor.

10. The device of claim 1, wherein the one or more features comprise one or more openings through the pre-metal dielectric layer to the layer so as to give airborne transported particles access to the layer.

11. The device of claim 1, wherein the one or more features comprise one or more openings through the pre-metal dielectric layer to the layer so as to give fluid transported particles access to the layer.

12. The device of claim 1, wherein the layer is a temperature-sensitive layer and wherein the one or more features are formed from a material that chemically or physically reacts to the presence of particles in the environment, thereby generating heat that is transported to the temperature-sensitive layer.

13. The device of claim 1, wherein the layer is structurally coupled with the integrated electronic device to pre-stress the global strain such that a change in the magnitude of the global strain in the substrate during operational use of the sensor is largest around a value of the physical parameter that lies roughly in the middle of the range of values that are going to be monitored with the sensor.

14. The device of claim 1, wherein the device is an integrated circuit device and wherein the layer encapsulates the integrated circuit device and wherein the layer induces global strain in the integrated circuit device.

15. A device comprising a sensor for sensing a value of a physical parameter indicative of an environment of the sensor, wherein:

the sensor comprises an integrated electronic circuit that includes a functional component of the integrated electronic circuit;

the sensor comprises means for affecting a magnitude of a global strain in a substrate of the integrated electronic circuit in dependence on the value of the physical parameter;

the means comprises a layer structurally coupled with the integrated electronic circuit and having a first coefficient of expansion with a first dependence on the physical parameter;

a second coefficient of expansion of the substrate has a second dependence on the physical parameter;

the first dependence is different from the second dependence;

the global strain determines an electrical property of the functional component of the integrated electronic circuit;

the integrated electronic circuit is operative to generate an output signal representative of the electrical property; and

the layer is operative to induce the global strain in the substrate;

wherein the layer is structurally coupled with the integrated electronic device to pre-stress the global strain such that a change in the magnitude of the global strain in the substrate during operational use of the sensor is largest around a value of the physical parameter that lies roughly in the middle of the range of values that are going to be monitored with the sensor.

16. A device comprising a sensor for sensing a value of a physical parameter indicative of an environment of the sensor, wherein:

the sensor comprises an integrated electronic circuit that includes a functional component of the integrated electronic circuit;

the sensor comprises means for affecting a magnitude of a global strain in a substrate of the integrated electronic circuit in dependence on the value of the physical parameter;

the means comprises a layer structurally coupled with the integrated electronic circuit and having a first coefficient of expansion with a first dependence on the physical parameter;

a second coefficient of expansion of the substrate has a second dependence on the physical parameter;

the first dependence is different from the second dependence;

the global strain determines an electrical property of the functional component of the integrated electronic circuit;

the integrated electronic circuit is operative to generate an output signal representative of the electrical property; and

the layer is operative to induce the global strain in the substrate;

wherein the device is an integrated circuit device and wherein the layer encapsulates the integrated circuit device and wherein the layer induces global strain in the integrated circuit device.