Integrated power module package

• US 8,872,328 B2
• Filed: 12/19/2012
• Issued: 10/28/2014
• Est. Priority Date: 12/19/2012
• Status: Active Grant

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Delgado, Eladio Clemente, Glaser, John Stanley, Rowden, Brian Lynn
• Primary Examiner(s): WILLIAMS, ALEXANDER O
• Application Number:
  US13/720,351
• Publication Number:
  US 20140167248A1
• Time in Patent Office: 678 Days
• Field of Search: 257/712, 257/713, 257/717, 257/714, 257/716, 257/719, 257/721, 257/686, 257/685, 257/700, 257/701, 257/758, 257/704, 257/707, 257/728, 257/723, 257/724, 257/699, 257/681, 257/731, 257/E23.01, 257/E23.08, 257/703, 257/690, 257/E23.077
• US Class Current: 257/699
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/24195 the item being a discrete passive component
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/83815 Reflow soldering
• CPC Class Codes: H01L 2224/92144 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/9222 Sequential connecting processes
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/46 involving the transfer of heat by flowing fluids H01L23/42, H01L23/44 take precedence
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/20105 : Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
• CPC Class Codes: H01L 2924/20106 : Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K

Abstract

An integrated power module includes a substantially planar insulated metal substrate having at least one cut-out region; at least one substantially planar ceramic substrate disposed within the cut-out region, wherein the ceramic substrate is framed on at least two sides by the insulated metal substrate, the ceramic substrate including a first metal layer on a first side and a second metal layer on a second side; at least one power semiconductor device coupled to the first side of the ceramic substrate; at least one control device coupled to a first surface of the insulated metal substrate; a power overlay electrically connecting the at least one semiconductor power device and the at least one control device; and a cooling fluid reservoir operatively connected to the second metal layer of the at least one ceramic substrate, wherein a plurality of cooling fluid passages are provided in the cooling fluid reservoir.

Claims

1. An integrated power module, comprising:

a substantially planar insulated metal substrate having at least one cut-out region;

at least one substantially planar ceramic substrate disposed within the cut-out region, wherein the ceramic substrate is framed on at least two sides by the insulated metal substrate, the ceramic substrate including a first metal layer on a first side and a second metal layer on a second side;

at least one power semiconductor device coupled to the first side of the ceramic substrate;

at least one control device coupled to a first surface of the insulated metal substrate;

a power overlay electrically connecting the at least one semiconductor power device and the at least one control device; and

a cooling fluid reservoir operatively connected to the second metal layer of the at least one ceramic substrate, wherein a plurality of cooling fluid passages are provided in the cooling fluid reservoir.

2. The integrated power module of claim 1, wherein the cooling fluid reservoir is integrally formed with the second metal layer of the at least one ceramic substrate.

3. The integrated power module of claim 1, wherein the cooling fluid passages are integrally formed in the second metal layer of the at least one ceramic substrate.

4. The integrated power module of claim 1, wherein the cooling fluid reservoir is attached to the second metal layer of the at least one ceramic substrate.

5. The integrated power module of claim 1, wherein the cooling fluid reservoir is attached to the second metal layer by solder.

6. The integrated power module of claim 1, further comprising a seal provided between the cooling fluid reservoir and the second metal layer.

7. The integrated power module of claim 1, wherein at least one gap is formed between the at least one ceramic substrate and the insulated metal substrate and the at least one gap is filled by filler material.

8. The integrated power module of claim 7, wherein the filler material comprises epoxy.

9. The integrated power module of claim 1, wherein the insulated metal substrate comprises a protrusion configured to engage the at least one ceramic substrate and exert pressure on the ceramic substrate.

10. The integrated power module of claim 1, further comprising at least one fastener configured to align and secure the insulated metal substrate to at least one heatsink.

11. The integrated power module of claim 1, further comprising a plurality of thermal vias provided between the second metal layer of the at least one ceramic substrate and extending through an insulating material layer of the insulated metal substrate.