Thin-film semiconductor component and component assembly

• US 8,872,330 B2
• Filed: 07/16/2007
• Issued: 10/28/2014
• Est. Priority Date: 08/04/2006
• Status: Expired due to Fees

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Herrmann, Siegfried, Hahn, Berthold
• Primary Examiner(s): Rizkallah, Kimberly
• Assistant Examiner(s): Ligai, Maria
• Application Number:
  US12/376,425
• Publication Number:
  US 20100163915A1
• Time in Patent Office: 2,661 Days
• Field of Search: 257/99, 257/E33.075, 257/81, 257/82, 257/706, 257/707, 257/796, 257/E33.056, 257/E33.057, 257/E33.058, 257/E33.068, 257/E23.101, 438/26, 438/122, 438/125, 438/126, 362/249.02, 362/311.02, 362/373
• US Class Current: 257/707
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 characterized by the shape
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.

Claims

1. A thin-film semiconductor component comprising:

a carrier layer, wherein the carrier layer is a film;

a layer stack arranged on the carrier layer, the layer stack containing a semiconductor material and configured to emit radiation; and

a heat dissipating layer configured to cool the thin-film semiconductor component and applied on the carrier layer, the heat dissipating layer being arranged between the carrier layer and the layer stack,

wherein the thin-film semiconductor component is free of a growth substrate used for growing the layer stack,

wherein the heat-dissipating layer is embodied as a closed area,

wherein side edges bounding the closed area run in curved fashion,

wherein the heat-dissipating layer comprises an indented side edge and a bulgy side edge opposite to the indented side edge, and

wherein the layer stack is arranged at the indented side edge.

2. The thin-film semiconductor component as claimed in claim 1, wherein the heat dissipating layer has a base area which is at least equal in size to a base area of the layer stack.

3. The thin-film semiconductor component as claimed in claim 1, wherein the heat dissipating layer has a thickness of about one- to two-digit micrometers.

4. The thin-film semiconductor component as claimed in claim 1, wherein the carrier layer contains a plastic material.

5. The thin-film semiconductor component as claimed in claim 1, wherein the carrier layer comprises a first partial layer and a second partial layer, and wherein the first partial layer is a layer applied to the second partial layer and the second partial layer is a film.

6. The thin-film semiconductor component as claimed in claim 1, wherein the carrier layer has a thickness of less than or equal to 100 μ

m.

7. The thin-film semiconductor component as claimed in claim 6, wherein the thin-film semiconductor component has a thickness of less than or equal to 100 μ

m.

8. The thin-film semiconductor component as claimed in claim 1, wherein a covering layer configured to cover the layer stack is arranged on a side of the layer stack opposite to the carrier layer.

9. The thin-film semiconductor component as claimed in claim 8, wherein the covering layer is a film.

10. The thin-film semiconductor component as claimed in claim 8, wherein the covering layer contains a transparent material.

11. The thin-film semiconductor component as claimed in claim 8, wherein the covering layer has an optical structure.

12. The thin-film semiconductor component as claimed in claim 11, wherein the covering layer is partly reflectively coated.

13. A component assembly comprising at least two thin-film semiconductor components as claimed in claim 1, wherein the thin-film semiconductor components have a common carrier layer.

14. The component assembly as claimed in claim 13, wherein a common contact pad for an electrical contact of the layer stacks on a coupling-out side is applied on the carrier layer between the layer stacks.

15. The component assembly as claimed in claim 13, wherein the thin-film semiconductor components are connected in series.

16. The thin-film semiconductor component as claimed in claim 1, wherein the heat dissipating layer is arranged directly on the carrier layer.

17. The thin-film semiconductor component as claimed in claim 16, wherein at least part of the layer stack is arranged directly on the heat dissipating layer.