Forming grounded through-silicon vias in a semiconductor substrate
First Claim
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1. A method of forming a semiconductor device, comprising:
- providing a semiconductor substrate, the semiconductor substrate having a first side and a second side opposite the first side;
forming a through-silicon via (TSV) opening extending from the first side of the semiconductor substrate into the semiconductor substrate;
forming a liner layer on the first side of the semiconductor substrate and along the sidewalls and bottom of the TSV opening;
depositing a first conductive material layer over the liner layer in the opening to form a TSV;
forming an inter-layer dielectric (ILD) layer over the first side of the semiconductor substrate;
forming a via opening extending from the ILD layer into a portion of the semiconductor substrate;
forming a trench opening in the ILD layer to expose a portion of the TSV; and
depositing a second conductive material layer in the via and the trench openings to form an interconnect structure, the interconnect structure electrically connecting the TSV with the semiconductor substrate.
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Abstract
A method of forming an interposer includes providing a semiconductor substrate, the semiconductor substrate having a front surface and a back surface opposite the front surface; forming one or more through-silicon vias (TSVs) extending from the front surface into the semiconductor substrate; forming an inter-layer dielectric (ILD) layer overlying the front surface of the semiconductor substrate and the one or more TSVs; and forming an interconnect structure in the ILD layer, the interconnect structure electrically connecting the one or more TSVs to the semiconductor substrate.
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Citations
35 Claims
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1. A method of forming a semiconductor device, comprising:
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providing a semiconductor substrate, the semiconductor substrate having a first side and a second side opposite the first side; forming a through-silicon via (TSV) opening extending from the first side of the semiconductor substrate into the semiconductor substrate; forming a liner layer on the first side of the semiconductor substrate and along the sidewalls and bottom of the TSV opening; depositing a first conductive material layer over the liner layer in the opening to form a TSV; forming an inter-layer dielectric (ILD) layer over the first side of the semiconductor substrate; forming a via opening extending from the ILD layer into a portion of the semiconductor substrate; forming a trench opening in the ILD layer to expose a portion of the TSV; and depositing a second conductive material layer in the via and the trench openings to form an interconnect structure, the interconnect structure electrically connecting the TSV with the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming an interposer, comprising:
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providing a semiconductor substrate, the semiconductor substrate having a front surface and a back surface opposite the front surface; forming one or more through-silicon vias (TSVs) extending from the front surface into the semiconductor substrate; forming an inter-layer dielectric (ILD) layer overlying the front surface of the semiconductor substrate and the one or more TSVs; and forming an interconnect structure having a first partition and a second partition, the first partition formed in the ILD layer and the second partition formed in a portion of the semiconductor substrate, wherein the interconnect structure electrically connecting the one or more TSVs to the semiconductor substrate. - View Dependent Claims (13, 14, 15)
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16. An integrated circuit structure, comprising:
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a semiconductor substrate having a front surface and a back surface opposite the front surface; a through-silicon via (TSV) formed extending from the front surface of the semiconductor substrate into the semiconductor substrate; and an interconnect structure having a first partition and a second partition, the first partition formed in an inter-layer dielectric (ILD) layer, the ILD layer overlying the front surface of the semiconductor substrate, and the second partition formed in a portion of the semiconductor substrate, wherein the interconnect structure electrically connects the TSV to the semiconductor substrate. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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23. An interposer, comprising:
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a semiconductor substrate having a front surface and a back surface opposite the front surface; a through-silicon via (TSV) formed extending from the front surface of the semiconductor substrate into the semiconductor substrate; a liner layer formed at least between the TSV and the semiconductor substrate; an inter-layer dielectric (ILD) layer formed over the front surface of the semiconductor substrate; and an interconnect structure having a first partition and a second partition, the first partition formed in the ILD layer and the second partition formed in a portion of the semiconductor substrate, wherein the interconnect structure electrically connects the TSV to the semiconductor substrate. - View Dependent Claims (24, 25, 26, 27, 28)
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29. A semiconductor package structure, comprising:
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an interposer having; a semiconductor substrate having a front surface and a back surface opposite the front surface; a through-silicon via (TSV) formed extending from the front surface of the semiconductor substrate into the semiconductor substrate; a liner layer formed at least between the TSV and the semiconductor substrate; an inter-layer dielectric (ILD) layer formed over the front surface of the semiconductor substrate; and an interconnect structure having a first partition and a second partition, the first partition formed in the ILD layer and the second partition formed in a portion of the semiconductor substrate, wherein the interconnect structure electrically connects the TSV to the semiconductor substrate; a semiconductor chip; and a plurality of bonding pads bonding the semiconductor chip to the interposer. - View Dependent Claims (30, 31, 32)
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33. A semiconductor package structure, comprising:
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an interposer having; a semiconductor substrate having a front surface and a back surface opposite the front surface; a through-silicon via (TSV) formed extending from the front surface of the semiconductor substrate into the semiconductor substrate; a liner layer formed at least between the TSV and the semiconductor substrate; an inter-layer dielectric (ILD) layer formed over the front surface of the semiconductor substrate; and an interconnect structure having a first partition and a second partition, the first partition formed in the ILD layer and the second partition formed in a portion of the semiconductor substrate, wherein the interconnect structure electrically connects the TSV to the semiconductor substrate; a multi-chip semiconductor structure having at least a first chip and a second chip; and a plurality of bonding pads bonding the multi-chip semiconductor structure to the interposer. - View Dependent Claims (34, 35)
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Specification