Memory cell presetting for improved memory performance
First Claim
1. A method comprising:
- using a computer system to identify a region in a phase change memory, the region comprising a plurality of memory cells characterized by a write performance characteristic that has a first expected value when a write operation changes a first current state of the memory cells to a desired state of the memory cells and a second expected value when a write operation changes a specified state of the memory cells to the desired state of the memory cells, wherein the second expected value is closer than the first expected value to a desired value of the write performance characteristic;
setting the plurality of memory cells in the region to the specified state; and
writing data into the plurality of memory cells responsive to the setting,wherein each of the memory cells consist of one of a SET state and a RESET state and wherein the desired state is selected to be either the RESET state or the SET state based on which state has a longer writer latency.
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Abstract
Memory cell presetting for improved performance including a method for using a computer system to identify a region in a memory. The region includes a plurality of memory cells characterized by a write performance characteristic that has a first expected value when a write operation changes a current state of the memory cells to a desired state of the memory cells and a second expected value when the write operation changes a specified state of the memory cells to the desired state of the memory cells. The second expected value is closer than the first expected value to a desired value of the write performance characteristic. The plurality of memory cells in the region are set to the specified state, and the data is written into the plurality of memory cells responsive to the setting.
42 Citations
20 Claims
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1. A method comprising:
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using a computer system to identify a region in a phase change memory, the region comprising a plurality of memory cells characterized by a write performance characteristic that has a first expected value when a write operation changes a first current state of the memory cells to a desired state of the memory cells and a second expected value when a write operation changes a specified state of the memory cells to the desired state of the memory cells, wherein the second expected value is closer than the first expected value to a desired value of the write performance characteristic; setting the plurality of memory cells in the region to the specified state; and writing data into the plurality of memory cells responsive to the setting, wherein each of the memory cells consist of one of a SET state and a RESET state and wherein the desired state is selected to be either the RESET state or the SET state based on which state has a longer writer latency. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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using a computer system to identify a region in a phase change memory, the region comprising a plurality of memory cells characterized by a write performance characteristic that is based on a difference between a current state of the memory cells and a desired state of the memory cells, wherein each of the memory cells consist of one of a SET state and a RESET state; setting all of the plurality of memory cells in the region to a common specified state, wherein the common specified state is selected to be either the RESET state or the SET state based on which state has a longer write latency; receiving a write request, the write request comprising write data and specifying a write address in the phase change memory that does not correspond to the region; determining whether the write request should be redirected to the region in the phase change memory, the determining responsive to a state of the computer system and to whether an expected value of the write performance characteristic for writing to the phase change region in the phase change memory is closer to a desired value of the write performance characteristic than an expected value of the write performance characteristic for writing to the specified write address; responsive to determining that the write request should not be redirected to the region in the phase change memory, writing the write data into the phase change memory at the specified write address in the phase change memory; and responsive to determining that the write request should be redirected to the region in the phase change memory, writing the write data into the region in the phase change memory. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A system comprising:
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a phase change memory comprising memory lines, each memory line comprising a plurality of memory cells, wherein each of the memory cells consist of one of a SET state and a RESET state; a cache comprising cache lines corresponding to a subset of the memory lines; and a memory controller in communication with the phase change memory and the cache, the memory controller configured to perform a method that comprises scheduling a request to set all of the plurality of memory cells of the subset of the memory lines to a common specified state in response to a cache line attaining a dirty state wherein the dirty state indicates that contents of the memory line are outdated, wherein the common specified state is selected to be either the RESET state or the SET state based on which state has a longer writer latency. - View Dependent Claims (17, 18, 19, 20)
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Specification