Technique for forming a MEMS device using island structures

• US 8,877,536 B1
• Filed: 03/30/2011
• Issued: 11/04/2014
• Est. Priority Date: 03/30/2011
• Status: Active Grant

• Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation (Semiconductor Manufacturing International Corporation)
• Original Assignee: Silicon Laboratories Incorporated
• Inventors: Low, Carrie W., Quevy, Emmanuel P.
• Primary Examiner(s): TAYLOR, EARL N
• Application Number:
  US13/075,806
• Time in Patent Office: 1,315 Days
• Field of Search: 438/50, 438 51- 53, 735/141.6, 735/143.2, 735/143.5
• US Class Current: 438/50
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers

Abstract

A method of manufacturing an integrated circuit including a MEMS device includes forming a structural layer above a substrate including at least one semiconductor device. The method includes forming an attachment to a first portion of the structural layer, the attachment having a thickness substantially greater than a thickness of the structural layer. In at least one embodiment of the method, the attachment is conjoined with the first portion of the structural layer and the first portion of the structural layer and the attachment are operative to mechanically move in unison. In at least one embodiment of the method, forming the attachment includes forming a patterned filler layer of a first material above the structural layer and forming a patterned conformal layer of a second material on the patterned filler layer. The filler layer has a thickness substantially greater than the thickness of the structural layer.

Claims

1. A method of manufacturing an integrated circuit including a MEMS device comprising:

forming a structural layer above a substrate including at least one semiconductor device;

patterning the structural layer to form a first portion of the structural layer;

forming an attachment to the first portion of the structural layer, the attachment comprising a portion of a layer having a thickness substantially greater than a thickness of the structural layer, the attachment being conjoined with the first portion of the structural layer; and

releasing the first portion of the structural layer and the attachment from the substrate.

2. The method, as recited in claim 1, wherein the first portion of the structural layer and the attachment are operative to mechanically move in unison in a direction with respect to the substrate.

3. The method, as recited in claim 1, wherein the method is carried out at one or more temperatures less than a tolerable threshold temperature for the at least one semiconductor device.

4. The method, as recited in claim 1, wherein the attachment comprises a patterned filler layer and a patterned conformal layer coating the patterned filler layer and forming the attachment comprises:

forming the patterned filler layer of a first material above the structural layer, the patterned filler layer being the portion of the layer having the thickness substantially greater than the thickness of the structural layer; and

forming the patterned conformal layer of a second material on the patterned filler layer.

5. The method, as recited in claim 4, wherein the patterned filler layer has a thickness of at least twice the thickness of the structural layer.

13. The method, as recited in claim 1, further comprising:

forming at least one electrical contact to a semiconductor device of the at least one semiconductor device; and

forming at least one interconnect structure coupled to the MEMS device and the at least one electrical contact.

14. The method, as recited in claim 1, wherein forming the attachment comprises:

forming a plurality of layers of a first material.

15. The method, as recited in claim 14, wherein forming the plurality of layers of the first material comprises:

patterning at least one of the plurality of layers to form at least one patterned layer; and

forming an additional layer of the first material on the at least one patterned layer conforming to the at least one patterned layer.

16. The method, as recited in claim 14, wherein forming the plurality of layers comprises:

forming a first layer of the plurality of layers; and

interrupting an interface of the first layer prior to forming a second layer of the plurality of layers above the first layer.

17. The method, as recited in claim 1, wherein after the releasing, the first portion of the structural layer, conjoined with the attachment, is suspended from the substrate.

19. The method, as recited in claim 4, wherein the first material has a higher density than the second material.

20. The method, as recited in claim 4, wherein the patterned filler layer has a thickness substantially greater than a thickness of the patterned conformal layer.

6. A method of manufacturing an integrated circuit including a MEMS device comprising:

forming a structural layer above a substrate including at least one semiconductor device; and

forming an attachment to a first portion of the structural layer, the attachment having a thickness substantially greater than a thickness of the structural layer,

wherein the attachment comprises a patterned filler layer and a patterned conformal layer coating the patterned filler layer and forming the attachment comprises;

forming the patterned filler layer of a first material above the structural layer, the patterned filler layer having a thickness substantially greater than the thickness of the structural layer; and

forming the patterned conformal layer of a second material on the patterned filler layer;

forming a sacrificial layer on the substrate, above the at least one semiconductor device and below the structural layer; and

removing portions of the sacrificial layer to release the first portion of the structural layer and the attachment.

7. The method, as recited in claim 6, wherein the second material is impervious to the removing.

8. The method, as recited in claim 6, wherein the removing forms a gap between the attachment and a second attachment, the gap having a width at least one order of magnitude less than the thickness of the attachment.

9. The method, as recited in claim 8, wherein the attachment and the second attachment form electrically isolated, electrostatically coupled portions of the MEMS device.

10. The method, as recited in claim 8, wherein an electrode of the MEMS device comprises the attachment and the first portion of the structural layer and a member of the MEMS device comprises the second attachment and a second portion of the structural layer.

11. The method, as recited in claim 10, wherein the member is a mass of an inertial sensor.

12. The method, as recited in claim 11, wherein another portion of the structural layer forms an anchor for the mass and is electrically coupled to the mass.

18. The method, as recited in claim 6, wherein after the release, the first portion of the structural layer and the attachment are suspended from the substrate.

21. The method, as recited in claim 6, wherein the first material has a higher density than the second material.

22. The method, as recited in claim 6, wherein the patterned filler layer has a thickness substantially greater than a thickness of the patterned conformal layer.