Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
First Claim
1. A semiconductor element comprising:
- an oxide semiconductor layer;
a first insulating layer in contact with a first surface of the oxide semiconductor layer;
a second insulating layer in contact with a second surface which is a back surface of the first surface of the oxide semiconductor layer;
a first conductive layer overlapping with the oxide semiconductor layer with the first insulating layer provided therebetween;
a second conductive layer overlapping with the oxide semiconductor layer with the second insulating layer provided therebetween;
a third conductive layer in electrical contact with the oxide semiconductor layer at one end of the first surface;
a fourth conductive layer in electrical contact with the oxide semiconductor layer at the other end of the first surface;
a fifth conductive layer in electrical contact with the oxide semiconductor layer at one end of the second surface; and
a sixth conductive layer in electrical contact with the oxide semiconductor layer at the other end of the second surface.
1 Assignment
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Accused Products
Abstract
A novel semiconductor element contributing to an increase in circuit scale is provided. In the semiconductor element, two different electrical switches are formed using a single oxide semiconductor layer. For example, in the semiconductor element, formation of a channel (a current path) in the vicinity of a bottom surface (a first surface) of the oxide semiconductor layer and formation of a channel in the vicinity of a top surface (a second surface) of the oxide semiconductor layer are independently controlled. Therefore, the circuit area can be reduced as compared to the case two electrical switches are separately provided (for example, the case where two transistors are separately provided). That is, a circuit is formed using the semiconductor element, whereby an increase in the circuit area due to an increase in circuit scale can be suppressed.
114 Citations
11 Claims
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1. A semiconductor element comprising:
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an oxide semiconductor layer; a first insulating layer in contact with a first surface of the oxide semiconductor layer; a second insulating layer in contact with a second surface which is a back surface of the first surface of the oxide semiconductor layer; a first conductive layer overlapping with the oxide semiconductor layer with the first insulating layer provided therebetween; a second conductive layer overlapping with the oxide semiconductor layer with the second insulating layer provided therebetween; a third conductive layer in electrical contact with the oxide semiconductor layer at one end of the first surface; a fourth conductive layer in electrical contact with the oxide semiconductor layer at the other end of the first surface; a fifth conductive layer in electrical contact with the oxide semiconductor layer at one end of the second surface; and a sixth conductive layer in electrical contact with the oxide semiconductor layer at the other end of the second surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification