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Semiconductor device and method for manufacturing the same

  • US 8,878,180 B2
  • Filed: 07/01/2013
  • Issued: 11/04/2014
  • Est. Priority Date: 02/05/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a transistor, the transistor comprising:

  • a gate electrode;

    a first insulating layer over the gate electrode;

    an oxide semiconductor layer over the gate electrode with the first insulating layer therebetween;

    a second insulating layer over the oxide semiconductor layer; and

    a conductive layer over the oxide semiconductor layer with the second insulating layer therebetween, wherein the conductive layer is overlapped with the gate electrode and is electrically connected with the gate electrode,wherein each of the gate electrode and the conductive layer extends beyond both side edges of the oxide semiconductor layer in a channel width direction of the transistor, andwherein a value of an off-state current per 1 μ

    m of a channel width of the transistor is lower than 100 zA/μ

    m at 85°

    C.

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