Light emitting diode with improved luminous efficiency

• US 8,878,220 B2
• Filed: 08/15/2011
• Issued: 11/04/2014
• Est. Priority Date: 08/27/2010
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Yang, Jeong Hee, Kim, Kyoung Wan, Yoon, Yeo Jin, Kim, Ye Seul, Oh, Sang Hyun, Suh, Duk Il, Lee, Keum Ju, Lee, Jin Woong, Jeong, Da Yeon
• Primary Examiner(s): SANDVIK, BENJAMIN P
• Application Number:
  US13/209,765
• Publication Number:
  US 20120049223A1
• Time in Patent Office: 1,177 Days
• Field of Search: 257/98, 257/99
• US Class Current: 257/99
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.

Claims

1. A light emitting diode, comprising:

a substrate comprising a first side edge and a second side edge;

a light emitting structure arranged on the substrate, the light emitting structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a transparent electrode layer arranged on the second conductivity-type semiconductor layer;

a first electrode pad contacting an upper surface of the first conductivity-type semiconductor layer, the first electrode pad located near a center of the first side edge;

two second electrode pads located near opposite distal ends of the second side edge, the two second electrode pads to supply electric current to the second conductivity-type semiconductor layer;

a first pad extension extending from the first electrode pad; and

a second pad extension extending from each of the two second electrode pads, the second pad extension contacting an upper surface of the transparent electrode layer,

wherein the first pad extension comprises a first inserting portion extending from the first electrode pad towards the second side edge; and

second inserting portions extending from a portion of the first inserting portion between a central region of the first inserting portion and the first electrode pad towards opposite sides of the first inserting portion along the first side edge.

2. The light emitting diode of claim 1, wherein

the second inserting portions are bent to extend towards the second side edge, and being further bent to extend toward each other and to terminate such that distal ends of the second inserting portions do not contact each other,

wherein the second pad extension comprises:

a connecting portion connecting the two second electrode pads to each other therethrough;

a first inserting portion extending from a central region of the connecting portion towards the first electrode pad;

second inserting portions extending from a distal end of the first inserting portion along the second side edge, the second inserting portions being bent to surround a distal end of the first pad extension first inserting portion and extending towards the first side edge; and

a third inserting portion extending from each of the two electrode pads towards the first side edge and being bent to extend towards the first electrode pad along the first side edge.

3. The light emitting diode of claim 2, wherein the first pad extension first inserting portion is collinear with the second pad extension first inserting portion, and each of the second pad extension second inserting portions are respectively located between the first inserting portion and the second inserting portions of the first pad extension.

4. The light emitting diode of claim 1, wherein the transparent electrode layer comprises nanoparticles and an upper transparent electrode layer covering the nanoparticles, and wherein the upper transparent electrode layer comprises a convex-concave surface.

5. The light emitting diode of claim 4, wherein the nanoparticles comprise a rounded surface.

6. The light emitting diode of claim 1, further comprising an insulation layer covering the transparent electrode layer, wherein the insulation layer comprises a convex-concave surface.

7. The light emitting diode of claim 1, further comprising micro-lenses,

wherein the transparent electrode layer comprises blind holes or through-holes and the micro-lenses are arranged in the holes.

8. The light emitting diode of claim 7, wherein the micro-lenses comprise a material having a lower refractive index than the transparent electrode layer.

9. The light emitting diode of claim 8, wherein the micro-lenses comprise SiO₂.

10. The light emitting diode of claim 7, wherein the micro-lenses comprise a vertical cross-section, a width of which gradually decreases in a direction away from the substrate.

11. The light emitting diode of claim 7, wherein the micro-lenses comprise a vertical cross-section, which comprises at least two inclined surfaces with an obtuse angle defined therebetween.

12. The light emitting diode of claim 7, wherein the micro-lenses comprise a horizontal cross-section of a circular shape, an elliptical shape, a hexagonal shape, a rectangular shape, or a triangular shape.