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Semi-insulating group III metal nitride and method of manufacture

  • US 8,878,230 B2
  • Filed: 03/04/2011
  • Issued: 11/04/2014
  • Est. Priority Date: 03/11/2010
  • Status: Active Grant
First Claim
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1. A bulk gallium-containing nitride crystal comprising:

  • a length greater than about 5 millimeters;

    a wurtzite crystal structure;

    a concentration of oxygen from about 1010 atoms per cubic centimeter to about 1017 atoms per cubic centimeter;

    an impurity concentration greater than about 1015 cm

    3
    of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl;

    a compensatory dopant selected from V, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, and a combination of any of the foregoing, wherein the concentration of the compensatory dopant is between about 1014 cm

    3
    and about 1016 cm

    3
    ;

    an optical absorption coefficient less than about 10 cm

    1
    at wavelengths between about 395 nm and about 460 nm; and

    an electrical resistivity at room temperature greater than about 107 ohm-centimeter.

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