Method for manufacturing insulated-gate MOS transistors

• US 8,878,331 B2
• Filed: 10/24/2012
• Issued: 11/04/2014
• Est. Priority Date: 10/25/2011
• Status: Active Grant

• Current Assignee: STMicroelectronics SAS (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SAS (STMicroelectronics NV)
• Inventors: Gros-Jean, Mickael, Gaumer, Clement, Perrin, Emmanuel Bayard
• Primary Examiner(s): KUSUMAKAR, KAREN M
• Application Number:
  US13/659,771
• Publication Number:
  US 20130099329A1
• Time in Patent Office: 741 Days
• Field of Search: 257/402, 257/411, 257/496, 257/510
• US Class Current: 257/496
• CPC Class Codes: H01L 21/28229 by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer
• CPC Class Codes: H01L 21/76232 of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls H01L21/76229 takes precedence
• CPC Class Codes: H01L 21/823481 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A method for defining an insulator in a semiconductor substrate includes forming a trench in the substrate, forming in the trench an insulating material having its upper surface arranged above the surface of the substrate, and forming a diffusion barrier layer in a portion of the insulating material located above the surface of the semiconductor substrate. Such insulators can be used, for example, to insulate and delineate electronic components or portions of components formed in the substrate.

Claims

1. A method, comprising:

defining an insulating layer in a semiconductor substrate, the defining including;

forming a trench in the substrate;

positioning in the trench an insulating material having an upper surface located above an upper surface of the substrate; and

forming a diffusion barrier layer in a portion of the insulating material located above the surface of the semiconductor substrate, wherein forming the diffusion barrier layer includes;

depositing a stack that includes a carbon layer, a layer capable of providing oxygen atoms, and an encapsulation layer; and

annealing the stack.

2. The method of claim 1, comprising defining a mask on the upper surface of the substrate, the mask having an opening over the trench.

3. The method of claim 1, wherein the positioning the insulating material comprises forming silicon oxide in the trench.

4. The method of claim 1, wherein the forming the diffusion barrier layer comprises forming the diffusion barrier layer of silicon carboxide.

5. The method of claim 1, decreasing a thickness of the mask by etching the mask prior to depositing the stack.

6. The method of claim 1, wherein the layer capable of providing oxygen atoms is a titanium nitride or titanium layer, and the encapsulation layer is a silicon layer.

7. The method of claim 1, wherein forming the diffusion barrier layer comprises implanting carbon atoms in the insulating material.

8. The method of claim 1, further comprising decreasing a thickness of the insulating material by etching a portion of the insulating material.

9. A device, comprising:

a semiconductor substrate;

an insulating area defined in the semiconductor substrate;

a gate for a transistor, the gate being positioned adjacent to the insulating area and including a first insulating layer of high dielectric constant and a second insulating layer having atoms capable of diffusing towards the first layer; and

a diffusion barrier layer on said insulating area and positioned above a plane defined by an upper surface of the semiconductor substrate, at least a portion of the diffusion barrier located between the insulating material and the gate, the diffusion barrier including atoms of an element of one of boron, phosphorus, or carbon.

15. The device of claim 9, wherein the diffusion barrier layer is positioned on a portion of the insulating material extending above the plane.

10. A device, comprising:

a semiconductor substrate;

a trench formed in the semiconductor substrate;

an insulating material positioned in the trench and extending above a plane defined by an upper surface of the semiconductor substrate;

a gate of a transistor, the gate being positioned adjacent to the insulating area and including a first insulating layer of high dielectric constant and a second insulating layer having atoms capable of diffusing towards the first layer; and

a diffusion barrier layer positioned on the insulating material and at least a portion of the diffusion barrier located between the insulating material and the gate, the diffusion barrier including atoms of an element of one of boron, phosphorus, or carbon.

11. The device of claim 10, wherein the gate is positioned on the semiconductor substrate adjacent to the trench.

12. The device of claim 10 wherein the diffusion barrier layer is positioned in a portion of the insulating material extending above the plane.

13. The device of claim 10 wherein the diffusion barrier layer includes atoms of carbon.

14. The device of claim 13 wherein the carbon atoms are constituent elements of silicon carboxide molecules present in the insulating material.

16. A device, comprising:

a semiconductor substrate;

an insulating area defined in the semiconductor substrate;

a diffusion barrier layer located on a portion of said insulating area that is located on a first portion of the insulating area and leaves exposed a second portion of the insulating area, the diffusion barrier being positioned above a plane defined by an upper surface of the semiconductor substrate and without contacting the semiconductor substrate.

17. The device of claim 16 further comprising a gate for a transistor, the gate being positioned adjacent to the insulating area and including a first insulating layer of high dielectric constant and a second layer having atoms capable of diffusing towards the first layer.

18. The device of claim 16 wherein the diffusion barrier includes atoms of an element of one of boron, phosphorus, or carbon.