Method for driving semiconductor device
First Claim
1. A method for driving a semiconductor device comprising a first wiring, a second wiring, a first transistor, a second transistor whose conductivity type is different from a conductivity type of the first transistor, and a third transistor having a channel formation region including a semiconductor, a band gap of which is higher than a band gap of silicon and an intrinsic carrier density of which is lower than an intrinsic carrier density of silicon,wherein one of a source and a drain of the first transistor is electrically connected to the first wiring, and the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, andwherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the second transistor, and the other of the source and the drain of the third transistor is electrically connected to the second wiring, the method comprising:
- in a first period, turning off the third transistor when the first transistor is switched from one of an on state and an off state to the other of the on state and the off state, and turning on the third transistor when one of the first transistor and the second transistor is turned on and the other of the first transistor and the second transistor is turned off; and
in a second period after the first period, turning off the third transistor regardless of a state of the second transistor.
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Accused Products
Abstract
To provide a driving method of a semiconductor device for reducing power consumption. In a method for driving a semiconductor device of one embodiment of the present invention, in a first period, a switch configured to control an electrical connection between a first wiring and a second wiring together with an n-channel transistor and a p-channel transistor is in an off state during a period in which the states of the n-channel transistor and the p-channel transistor gates of which are electrically connected to each other are switched between an on state and an off state. In a second period, the switch is set to be in an off state. The switch has a channel formation region in a semiconductor, band gap of which is higher than silicon and intrinsic carrier density of which is lower than silicon.
109 Citations
20 Claims
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1. A method for driving a semiconductor device comprising a first wiring, a second wiring, a first transistor, a second transistor whose conductivity type is different from a conductivity type of the first transistor, and a third transistor having a channel formation region including a semiconductor, a band gap of which is higher than a band gap of silicon and an intrinsic carrier density of which is lower than an intrinsic carrier density of silicon,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring, and the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, and wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the second transistor, and the other of the source and the drain of the third transistor is electrically connected to the second wiring, the method comprising: -
in a first period, turning off the third transistor when the first transistor is switched from one of an on state and an off state to the other of the on state and the off state, and turning on the third transistor when one of the first transistor and the second transistor is turned on and the other of the first transistor and the second transistor is turned off; and in a second period after the first period, turning off the third transistor regardless of a state of the second transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for driving a semiconductor device comprising a first wiring, a second wiring, a first transistor, a second transistor whose conductivity type is different from a conductivity type of the first transistor, and a third transistor having a channel formation region including a semiconductor, a band gap of which is higher than a band gap of silicon and an intrinsic carrier density of which is lower than an intrinsic carrier density of silicon,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring, and the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the third transistor, and wherein one of a source and a drain of the second transistor is electrically connected to the other of the source and the drain of the third transistor, and the other of the source and the drain of the second transistor is electrically connected to the second wiring, the method comprising: -
in a first period, turning off the third transistor when the first transistor is switched from one of an on state and an off state to the other of the on state and the off state, and turning on the third transistor when one of the first transistor and the second transistor is turned on and the other of the first transistor and the second transistor is turned off; and
,in a second period after the first period, turning off the third transistor regardless of a state of the second transistor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification
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- Resources
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Koyama, Jun
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Primary Examiner(s)ROJAS, DANIEL E
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Application NumberUS13/961,048Publication NumberTime in Patent Office454 DaysField of Search327/109US Class Current327/109CPC Class CodesG09G 3/00 Control arrangements or cir...H03K 19/00 Logic circuits, i.e. having...H03K 3/012 Modifications of generator ...
