Meta material and method of manufacturing the same

• US 8,879,158 B2
• Filed: 01/25/2011
• Issued: 11/04/2014
• Est. Priority Date: 07/15/2010
• Status: Expired due to Fees

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Choi, Choon Gi, Oh, Sang Soon
• Primary Examiner(s): GREECE, JAMES R
• Application Number:
  US13/013,092
• Publication Number:
  US 20120013989A1
• Time in Patent Office: 1,379 Days
• Field of Search: 359/642, 307/104, 343/702
• US Class Current: 359/642
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 1/007 made of negative effective refractive index materials
• CPC Class Codes: G02B 2207/101 Nanooptics
• CPC Class Codes: H01Q 15/0086 said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials

Abstract

Provided are a meta material and a method of manufacturing the same. The meta material comprises: a substrate; at least one conductive nano pattern patterned on the substrate and having a size with a negative refractive index in a predetermined electromagnetic wavelength band; and a dielectric layer covering the conductive nano patterns.

Claims

1. A method of manufacturing a meta material, the method comprising:

preparing a substrate;

forming at least one conductive nano pattern having a negative refractive index on the substrate; and

forming a dielectric layer on the conductive nano patterns having a concentric ring shape,

wherein the conductive nano patterns are formed using a copolymerization soft patterning method, and

wherein the copolymerization soft patterning method comprises;

forming a block copolymer on the substrate;

forming a photoresist pattern exposing the block copolymer;

selectively exposing the substrate using a self-assembly method of the block copolymer; and

forming the concentric ring shape with a graphene or a graphene oxide on the exposed substrate.

2. The method of claim 1, wherein the conductive nano patterns comprise the graphene formed using a chemical vapor deposition method or the graphene oxide formed using a graphite oxidation-reduction method.

3. The method of claim 1, wherein the block copolymer is polystyrene(PS)-random-polymethylmethacrylate(PMMA) comprising PS and PMMA.

4. The method of claim 3, wherein the self-assembly method of the block copolymer comprises:

arranging the PS and the PMMA of the block copolymer on the substrate, with the concentric ring shape; and

exposing the substrate by removing the PMMA of the block copolymer.