Film deposition apparatus, film deposition method, and computer readable storage medium

• US 8,882,915 B2
• Filed: 04/05/2010
• Issued: 11/11/2014
• Est. Priority Date: 04/09/2009
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kato, Hitoshi, Honma, Manabu, Kikuchi, Hiroyuki
• Primary Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US12/753,932
• Publication Number:
  US 20100260935A1
• Time in Patent Office: 1,681 Days
• Field of Search: 118/715, 118/719, 118/718
• US Class Current: 118/719
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C23C 16/458 characterised by the method used for supporting substrates in the reaction chamber
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/463 Cooling of the substrate
• CPC Class Codes: C23C 16/482 using incoherent light, UV to IR, e.g. lamps
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/68764 characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
• CPC Class Codes: H01L 21/68771 characterised by supporting more than one semiconductor substrate

Abstract

A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.

Claims

1. A film deposition apparatus for depositing a film on a substrate by relatively rotating a table on which the substrate is placed and plural reaction gas supplying portions configured to supply corresponding reaction gases that react with one another in order to supply in turn the reaction gases to the substrate, thereby producing a layer of a reaction product, the film deposition apparatus comprising:

a substrate receiving area provided to place the substrate on an upper surface of the table in a vacuum chamber;

a rotational mechanism configured to rotate the plural reaction gas supplying portions and the table in relation to each other so that the substrate is located in turn in plural process areas where the corresponding reaction gases are supplied from the corresponding gas supplying portions;

a first reaction gas supplying portion configured to supply a first reaction gas in order to adsorb the first reaction gas on the substrate, wherein the first reaction gas supplying portion opposes the substrate receiving area on the table;

an auxiliary gas supplying portion configured to supply to the substrate an auxiliary gas that reacts with the first reaction gas adsorbed on the substrate to produce an intermediate product having reflowability, wherein the auxiliary gas supplying portion is provided away from and downstream relative to the first reaction gas supplying portion along a relative rotation direction of the table in relation to the plural reaction gas supplying portions, and opposes the substrate receiving area on the table;

a second reaction gas supplying portion configured to supply to the substrate a second reaction gas that reacts with the intermediate product on the substrate to produce a reaction product, wherein the second reaction gas supplying portion is provided downstream relative to the auxiliary gas supplying portion along the relative rotation direction, and opposes the substrate receiving area on the table;

a first separation gas supplying portion in a first separation areas provided between a first process area where the first reaction gas is supplied and an auxiliary process area where the auxiliary gas is supplied, in order to separate atmospheres of the first process area and the auxiliary process area;

a second separation gas supplying portion in a second separation area provided between a second process area where the second reaction gas is supplied and the first process area in order to separate atmospheres of the second process area and the first process area, wherein each of the first and second separation areas includes a convex portion whose lower surface provides a first ceiling surface lower than the second ceiling surface of the first process area, the auxiliary process area and the second process area in order to separate the atmospheres of the first, auxiliary, and second process areas, the convex portion providing the first ceiling surface in the first and second separation areas having a greater width on an upstream side along a circumference of the first ceiling surface; and

a heating portion configured to heat the substrate in order to densify the reaction product, wherein the heating portion is provided downstream relative to the second gas supplying portion and upstream relative to the first reaction gas supplying portion along the relative rotation direction, and opposes the substrate receiving area on the table,

wherein the second separation gas supplying portion in the second separation area cools the substrate by a gas supplied from the second separation gas supplying portion.

2. The film deposition apparatus recited in claim 1, wherein the heating portion includes a heating lamp provided to oppose the substrate receiving area on the table.

3. The film deposition apparatus recited in claim 1, further comprising a control portion configured to output a control signal so that adsorption of the first reaction gas on the substrate, production of the intermediate product, production of the reaction product, and densification of the reaction product are repeated in this order plural times by rotating the table in order to carry out a cycle of supplying to the substrate the first reaction gas, the auxiliary gas, and the second gas in this order from the first gas supplying portion, the auxiliary gas supplying portion, and the second gas supplying portion, respectively, and then by heating the substrate in order to densify the reaction product every time the cycle is carried out.

4. The film deposition apparatus recited in claim 1, further comprising a control portion configured to output a control signal so that adsorption of the first reaction gas on the substrate, production of the intermediate product, and production of the reaction product are repeated in this order plural times by rotating the table in order to carry out a cycle of supplying to the substrate the first reaction gas, the auxiliary gas, and the second gas in this order from the first gas supplying portion, the auxiliary gas supplying portion, and the second gas supplying portion, respectively, and then by heating the substrate in order to densify the reaction product after the cycle is carried out plural times.

5. The film deposition apparatus recited in claim 1, further comprising a plasma supplying portion configured to supply plasma to the substrate, wherein the plasma supplying portion is provided downstream relative to the second reaction gas supplying portion and upstream relative to the heating portion along the relative rotation direction, and opposes the substrate receiving area on the table.

6. The film deposition apparatus recited in claim 1, further comprising a third reaction gas supplying portion configured to supply a third reaction gas containing a dopant of at least one of boron and phosphorus to an upper surface of the substrate in order to dope the dopant into the reaction product, wherein the third reaction gas supplying portion is provided downstream relative to the first reaction gas supplying portion and upstream relative to the heating portion along the relative rotation direction.