Mixed mode pulsing etching in plasma processing systems

• US 8,883,028 B2
• Filed: 07/16/2012
• Issued: 11/11/2014
• Est. Priority Date: 12/28/2011
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Kanarik, Keren Jacobs
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US13/550,548
• Publication Number:
  US 20130168354A1
• Time in Patent Office: 848 Days
• Field of Search: None
• US Class Current: 216/68
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32146 Amplitude modulation, includes pulsing
• CPC Class Codes: H01J 37/32155 Frequency modulation
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.

Claims

1. A method for processing a substrate in a plasma processing chamber of a plasma processing system, said plasma processing chamber having at least one plasma generating source and at least a reactive gas source for providing at least a first reactive gas into an interior region of said plasma processing chamber and a non-reactive gas source for providing at least a first non-reactive gas said interior region of said plasma processing chamber, comprising:

(a) disposing said substrate on a work piece holder within said interior region;

(b) performing a mixed-mode pulsing (MMP) preparation phase, including flowing said first reactive gas into said interior region, and

forming a first plasma with at least said first reactive gas to process said substrate with said first plasma;

(c) performing a mixed mode pulsing (MMP) reactive phase, including flowing at least said first non-reactive gas into said interior region, and

forming a second plasma with at least said first non-reactive gas to process said substrate with said second plasma, wherein said second plasma is formed with a flow of said first reactive gas during said MMP reactive phase that is less than a flow of said first reactive gas during said MMP preparation phase; and

(d) repeating steps (b) and (c) for a plurality of times,

wherein said at least one plasma generating source is excited with a first RF signal having a first RF frequency during said MMP preparation phase, said first RF signal representing an RF signal having chirped frequencies.

2. The method of claim 1 wherein no first reactive gas is flowed into said interior region during said MMP reactive phase.

3. The method of claim 1 wherein said plasma processing chamber represents an inductively coupled plasma processing chamber.

4. The method of claim 1 wherein said plasma processing chamber represents a capacitively coupled plasma processing chamber.

5. The method of claim 1 wherein said non-reactive gas source further provides a second non-reactive gas, wherein said second non-reactive gas is flowed into said interior region during said MMP preparation phase.

6. The method of claim 1 wherein said first non-reactive gas is also flowed into said interior region during said MMP preparation phase.

7. The method of claim 1 wherein no bias power is applied to said work piece holder during said MMP preparation phase.

8. The method of claim 7 wherein bias power having a bias power level greater than zero is applied to said work piece holder during said MMP reactive phase.

9. The method of claim 1 wherein said at least one plasma generating source is excited with a first RF signal having a first RF frequency during said MMP preparation phase, said at least one plasma generating source is excited with a second RF signal having a second RF frequency that is different from said first RF frequency during said MMP reactive phase.

10. The method of claim 1 wherein said at least one plasma generating source is excited with a first RF signal having a first RF frequency during said MMP preparation phase, said first RF signal representing a pulsed RF signal.

11. The method of claim 1 further comprising flowing a second reactive gas different from said first reactive gas into said interior region during said MMP reactive phase.

12. The method of claim 11 wherein no first reactive gas is flowed during said MMP reactive phase.

13. The method of claim 1 wherein a first bias power is applied to said work piece holder during said MMP preparation phase and a second bias power having a different power level from a power level of said first bias power is applied to said work piece holder during said MMP reactive phase.

14. The method of claim 13 wherein said power level of said second bias power is higher than said power level of said first bias power.

15. The method of claim 1 wherein said plasma processing chamber is configured during said MMP reactive phase to generate non-reactive ions having a level of ion energy that is higher than required to etch adsorbed layer on a surface of said substrate but insufficient to etch non-adsorbed layer of said substrate, the adsorbed layer formed during said MMP preparation phase.

16. A method for processing a substrate in a plasma processing chamber of a plasma processing system, said plasma processing chamber having at least one inductive antenna and at least one reactive gas source for providing at least a first reactive gas into an interior region of said plasma processing chamber and a non-reactive gas source for providing at least a first non-reactive gas said interior region of said plasma processing chamber, comprising:

(a) disposing said substrate on a work piece holder within said interior region;

(b) performing a mixed-mode pulsing (MMP) preparation phase, including flowing said first reactive gas into said interior region, and

forming a first plasma with at least said first reactive gas to process said substrate with said first plasma;

(c) performing a mixed mode pulsing (MMP) reactive phase, including flowing at least said first non-reactive gas into said interior region, and

forming a second plasma with at least said first non-reactive gas to process said substrate with said second plasma, wherein said second plasma is formed with a flow of said first reactive gas during said MMP reactive phase that is less than a flow of said first reactive gas during said MMP preparation phase, wherein said plasma processing chamber is configured during said MMP reactive phase to generate non-reactive ions having a level of ion energy that is higher than required to etch non-adsorbed layer of said substrate, the adsorbed layer formed during said MMP preparation phase; and

(d) repeating steps (b) and (c) for a plurality of times.

17. The method of claim 16 wherein no first reactive gas is flowed into said interior region during said MMP reactive phase.

18. The method of claim 16 wherein no bias power is applied to said work piece holder during said MMP preparation phase.

19. The method of claim 18 wherein bias power having a bias power level greater than zero is applied to said work piece holder during said MMP reactive phase.

20. The method of claim 19 wherein said bias power is pulsed during said MMP reactive phase.

21. The method of claim 16 wherein said at least one inductive antenna is excited with a first RF signal having a first RF frequency during said MMP preparation phase, said at least one inductive antenna is excited with a second RF signal having a second RF frequency that is different from said first RF frequency during said MMP reactive phase.

22. The method of claim 16 wherein said at least one inductive antenna is excited with a first RF signal having a first RF frequency during said MMP preparation phase, said first RF signal representing a pulsed RF signal.

23. The method of claim 16 wherein said at least one inductive antenna is excited with a first RF signal having a first RF frequency during said MMP reactive phase, said first RF signal representing a pulsed RF signal.