Mixed mode pulsing etching in plasma processing systems
First Claim
1. A method for processing a substrate in a plasma processing chamber of a plasma processing system, said plasma processing chamber having at least one plasma generating source and at least a reactive gas source for providing at least a first reactive gas into an interior region of said plasma processing chamber and a non-reactive gas source for providing at least a first non-reactive gas said interior region of said plasma processing chamber, comprising:
- (a) disposing said substrate on a work piece holder within said interior region;
(b) performing a mixed-mode pulsing (MMP) preparation phase, including flowing said first reactive gas into said interior region, andforming a first plasma with at least said first reactive gas to process said substrate with said first plasma;
(c) performing a mixed mode pulsing (MMP) reactive phase, including flowing at least said first non-reactive gas into said interior region, andforming a second plasma with at least said first non-reactive gas to process said substrate with said second plasma, wherein said second plasma is formed with a flow of said first reactive gas during said MMP reactive phase that is less than a flow of said first reactive gas during said MMP preparation phase; and
(d) repeating steps (b) and (c) for a plurality of times,wherein said at least one plasma generating source is excited with a first RF signal having a first RF frequency during said MMP preparation phase, said first RF signal representing an RF signal having chirped frequencies.
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Accused Products
Abstract
A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.
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Citations
23 Claims
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1. A method for processing a substrate in a plasma processing chamber of a plasma processing system, said plasma processing chamber having at least one plasma generating source and at least a reactive gas source for providing at least a first reactive gas into an interior region of said plasma processing chamber and a non-reactive gas source for providing at least a first non-reactive gas said interior region of said plasma processing chamber, comprising:
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(a) disposing said substrate on a work piece holder within said interior region; (b) performing a mixed-mode pulsing (MMP) preparation phase, including flowing said first reactive gas into said interior region, and forming a first plasma with at least said first reactive gas to process said substrate with said first plasma; (c) performing a mixed mode pulsing (MMP) reactive phase, including flowing at least said first non-reactive gas into said interior region, and forming a second plasma with at least said first non-reactive gas to process said substrate with said second plasma, wherein said second plasma is formed with a flow of said first reactive gas during said MMP reactive phase that is less than a flow of said first reactive gas during said MMP preparation phase; and (d) repeating steps (b) and (c) for a plurality of times, wherein said at least one plasma generating source is excited with a first RF signal having a first RF frequency during said MMP preparation phase, said first RF signal representing an RF signal having chirped frequencies. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for processing a substrate in a plasma processing chamber of a plasma processing system, said plasma processing chamber having at least one inductive antenna and at least one reactive gas source for providing at least a first reactive gas into an interior region of said plasma processing chamber and a non-reactive gas source for providing at least a first non-reactive gas said interior region of said plasma processing chamber, comprising:
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(a) disposing said substrate on a work piece holder within said interior region; (b) performing a mixed-mode pulsing (MMP) preparation phase, including flowing said first reactive gas into said interior region, and forming a first plasma with at least said first reactive gas to process said substrate with said first plasma; (c) performing a mixed mode pulsing (MMP) reactive phase, including flowing at least said first non-reactive gas into said interior region, and forming a second plasma with at least said first non-reactive gas to process said substrate with said second plasma, wherein said second plasma is formed with a flow of said first reactive gas during said MMP reactive phase that is less than a flow of said first reactive gas during said MMP preparation phase, wherein said plasma processing chamber is configured during said MMP reactive phase to generate non-reactive ions having a level of ion energy that is higher than required to etch non-adsorbed layer of said substrate, the adsorbed layer formed during said MMP preparation phase; and (d) repeating steps (b) and (c) for a plurality of times. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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Specification