×

Mixed mode pulsing etching in plasma processing systems

  • US 8,883,028 B2
  • Filed: 07/16/2012
  • Issued: 11/11/2014
  • Est. Priority Date: 12/28/2011
  • Status: Active Grant
First Claim
Patent Images

1. A method for processing a substrate in a plasma processing chamber of a plasma processing system, said plasma processing chamber having at least one plasma generating source and at least a reactive gas source for providing at least a first reactive gas into an interior region of said plasma processing chamber and a non-reactive gas source for providing at least a first non-reactive gas said interior region of said plasma processing chamber, comprising:

  • (a) disposing said substrate on a work piece holder within said interior region;

    (b) performing a mixed-mode pulsing (MMP) preparation phase, including flowing said first reactive gas into said interior region, andforming a first plasma with at least said first reactive gas to process said substrate with said first plasma;

    (c) performing a mixed mode pulsing (MMP) reactive phase, including flowing at least said first non-reactive gas into said interior region, andforming a second plasma with at least said first non-reactive gas to process said substrate with said second plasma, wherein said second plasma is formed with a flow of said first reactive gas during said MMP reactive phase that is less than a flow of said first reactive gas during said MMP preparation phase; and

    (d) repeating steps (b) and (c) for a plurality of times,wherein said at least one plasma generating source is excited with a first RF signal having a first RF frequency during said MMP preparation phase, said first RF signal representing an RF signal having chirped frequencies.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×