×

Semiconductor device and manufacturing method thereof

  • US 8,883,556 B2
  • Filed: 12/20/2011
  • Issued: 11/11/2014
  • Est. Priority Date: 12/28/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an oxide semiconductor layer including crystals at least in a channel formation region wherein the crystals are c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer;

    forming a gate insulating layer over the oxide semiconductor layer;

    forming a gate electrode over the gate insulating layer;

    adding at least one element selected from Group 15 elements to regions of the oxide semiconductor layer with the use of the gate electrode as a mask so that a source region and a drain region are formed, andperforming a heat treatment after the adding step so that the source region and the drain region of the oxide semiconductor layer obtains a wurtzite crystal structure,wherein the oxide semiconductor layer comprises zinc, indium, and gallium.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×