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Semiconductor device

  • US 8,884,282 B2
  • Filed: 03/29/2011
  • Issued: 11/11/2014
  • Est. Priority Date: 04/02/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating film;

    a metal oxide film in contact with the first insulating film;

    an oxide semiconductor film in contact with the metal oxide film;

    a source electrode and a drain electrode in contact with the oxide semiconductor film and over the metal oxide film with the oxide semiconductor film interposed therebetween;

    a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and

    a gate electrode over the gate insulating film.

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