Display device

• US 8,884,302 B2
• Filed: 02/26/2013
• Issued: 11/11/2014
• Est. Priority Date: 09/15/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Inoue, Seiko, Miyake, Hiroyuki, Toyotaka, Kouhei
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/777,106
• Publication Number:
  US 20130168670A1
• Time in Patent Office: 623 Days
• Field of Search: 257/59, 257/72, 257/E29.117, 257/E29.151, 257/E29.202, 257/E29.273
• US Class Current: 257/72
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device including a first gate electrode and a second gate electrode formed apart from each other over an insulating surface, an oxide semiconductor film including a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode, and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, and the oxide semiconductor film, and being in direct contact with the oxide semiconductor film is provided.

Claims

1. A semiconductor device comprising:

a first gate electrode and a second gate electrode apart from each other over an insulating surface;

an oxide semiconductor film comprising a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode;

one of a source electrode and a drain electrode overlapping with a part of the first gate electrode and a part of the oxide semiconductor film;

the other of the source electrode and the drain electrode overlapping with a part of the second gate electrode and a part of the oxide semiconductor film; and

an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, the oxide semiconductor film, the source electrode, and the drain electrode, the insulating film being in direct contact with the oxide semiconductor film.

2. The semiconductor device according to claim 1, wherein the source electrode and the drain electrode comprise a metal selected from aluminum, chromium, tantalum, titanium, molybdenum, and tungsten.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises indium and zinc.

4. The semiconductor device according to claim 3, wherein the oxide semiconductor film further comprises gallium.

5. A semiconductor device comprising:

a first transistor over an insulating surface, the first transistor comprising;

a first gate electrode and a second gate electrode apart from each other over the insulating surface;

a first oxide semiconductor film comprising a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode;

one of a first source electrode and a first drain electrode overlapping with a part of the first gate electrode and a part of the first oxide semiconductor film;

the other of the first source electrode and the first drain electrode overlapping with a part of the second gate electrode and a part of the first oxide semiconductor film; and

an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, the first oxide semiconductor film, the first source electrode, and the first drain electrode, the insulating film being in direct contact with the first oxide semiconductor film, and

a second transistor over the insulating surface, the second transistor comprising;

a third gate electrode over the insulating surface;

a second oxide semiconductor film overlapping with the third gate electrode with the gate insulating film interposed therebetween;

a second source electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film;

a second drain electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film; and

the insulating film covering the gate insulating film, the third gate electrode, the second oxide semiconductor film, the second source electrode, and the second drain electrode, the insulating film being in direct contact with the second oxide semiconductor film.

6. The semiconductor device according to claim 5, wherein the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode comprise a metal selected from aluminum, chromium, tantalum, titanium, molybdenum, and tungsten.

7. The semiconductor device according to claim 5, wherein the first oxide semiconductor film and the second oxide semiconductor film comprise indium and zinc.

8. The semiconductor device according to claim 7, wherein the first oxide semiconductor film and the second oxide semiconductor film further comprise gallium.

9. A display device comprising:

a pixel portion comprising a plurality of pixels over an insulating surface, each of the plurality of pixels comprising;

a first transistor over an insulating surface, the first transistor comprising;

a first gate electrode and a second gate electrode apart from each other over the insulating surface;

a first oxide semiconductor film comprising a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode;

one of a first source electrode and a first drain electrode overlapping with a part of the first gate electrode and a part of the first oxide semiconductor film;

the other of the first source electrode and the first drain electrode overlapping with a part of the second gate electrode and a part of the first oxide semiconductor film; and

a first insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, the first oxide semiconductor film, the first source electrode, and the first drain electrode, the first insulating film being in direct contact with the first oxide semiconductor film;

a second insulating film over the first transistor; and

a light-emitting element over the second insulating film.

10. The display device according to claim 9, wherein the first source electrode and the first drain electrode comprise a metal selected from aluminum, chromium, tantalum, titanium, molybdenum, and tungsten.

11. The display device according to claim 9, wherein the first oxide semiconductor film comprises indium and zinc.

12. The semiconductor device according to claim 11, wherein the first oxide semiconductor film further comprises gallium.

13. The display device according to claim 9, further comprising a driver circuit, the driver circuit comprising:

a second transistor over an insulating surface, the second transistor comprising;

a third gate electrode over the insulating surface;

a second oxide semiconductor film overlapping with the third gate electrode with the gate insulating film interposed therebetween;

a second source electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film;

a second drain electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film; and

the first insulating film covering the gate insulating film, the third gate electrode, the second oxide semiconductor film, the second source electrode, and the second drain electrode, the first insulating film being in direct contact with the second oxide semiconductor film.

14. The display device according to claim 13, wherein the driver circuit is a source driver or a gate driver.

15. The display device according to claim 13, wherein the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode comprise a metal selected from aluminum, chromium, tantalum, titanium, molybdenum, and tungsten.

16. The display device according to claim 13, wherein the first oxide semiconductor film and the second oxide semiconductor film comprise indium and zinc.

17. The semiconductor device according to claim 16, wherein the first oxide semiconductor film and the second oxide semiconductor film further comprise gallium.