Optoelectronic semiconductor chip and method for producing same

• US 8,884,311 B2
• Filed: 04/29/2011
• Issued: 11/11/2014
• Est. Priority Date: 05/18/2010
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Bergbauer, Werner, Hppel, Lutz, Drechsel, Philipp, Klper, Christopher, Straburg, Martin, Rode, Patrick
• Primary Examiner(s): Le, Thao P
• Application Number:
  US13/696,602
• Publication Number:
  US 20130193450A1
• Time in Patent Office: 1,292 Days
• Field of Search: 257/79
• US Class Current: 257/79
• CPC Class Codes: H01L 31/02 Details
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.

Claims

1. An optoelectronic semiconductor chip comprising:

a semiconductor layer stack and a radiation exit or entrance face, wherein

the semiconductor layer stack comprises an active layer that generates or receives electromagnetic radiation, and

a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of said nanostructures comprising at least one substructure,

wherein

     1) the nanostructures are of pyramidal construction and hexagonal in shape when seen in top view,

     2) in a region of a center of each pyramid, and, hence, in the region of an apex, the substructure is formed as a recess, and

     3) the nanostructures extend laterally by at most 5 μ

m.

2. The optoelectronic semiconductor chip according to claim 1, wherein the nanostructures are arranged in a periodic pattern.

3. The optoelectronic semiconductor chip according to claim 1, wherein the nanostructures comprise a plurality of substructures, which exhibit different sizes and/or shapes.

4. The optoelectronic semiconductor chip according to claim 1, wherein the nanostructures are three-dimensional structures.

5. The optoelectronic semiconductor chip according to claim 1, wherein the nanostructures are pyramidal and each comprise a plurality of different-sized substructures.

6. The optoelectronic semiconductor chip according to claim 1, wherein the active layer is arranged between the nanostructures and the radiation exit or entrance face.

7. The optoelectronic semiconductor chip according to claim 1, wherein the active layer is arranged in the nanostructures.

8. An optoelectronic semiconductor chip comprising:

a semiconductor layer stack and a radiation exit face, wherein

the semiconductor layer stack comprises an active layer that generates electromagnetic radiation,

a plurality of nanostructures arranged on the radiation exit face, at least some of said nanostructures comprising at least one substructure,

the nanostructures each extend laterally by at most 2 μ

m,

the nanostructures are produced by metal organic vapor phase epitaxy, molecular beam epitaxy or liquid phase epitaxy, shape and size of the nanostructures and substructures being established by said method,

the substructures comprise vertical flanks,

the nanostructures are pyramidal and of hexagonal shape, seen in top view. the substructure is formed in a region of a center of each pyramid and, thus, in the region of an apex, and

the substructure is formed as a recess of circular shape, seen in top view.

9. A method of producing an optoelectronic semiconductor chip comprising:

forming a semiconductor layer stack comprising an active layer that generates or receives electromagnetic radiation,

forming nanostructures on the semiconductor layer stack or in the semiconductor layer stack, and

forming at least one substructure in at least some of the nanostructures. wherein the nanostructures are produced by metal organic vapor phase epitaxy molecular beam epitaxy or liquid phase epitaxy, shape and size of the nanostructures and of the substructures being established directly by said method, and

wherein the nanostructures extend laterally by at most 5 μ

m.

10. The method according to claim 9, wherein a surface area of the nano-structure is enlarged by the substructure.

11. The method according to claim 9, wherein a growth substrate, on which the semiconductor layer stack has been grown, is at least partially or completely detached.

12. The method according to claim 9, wherein the nanostructures are of pyramidal construction and hexagonal in shape when seen in top view.