Optoelectronic semiconductor chip and method for producing same
First Claim
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1. An optoelectronic semiconductor chip comprising:
- a semiconductor layer stack and a radiation exit or entrance face, whereinthe semiconductor layer stack comprises an active layer that generates or receives electromagnetic radiation, anda plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of said nanostructures comprising at least one substructure,wherein
1) the nanostructures are of pyramidal construction and hexagonal in shape when seen in top view,
2) in a region of a center of each pyramid, and, hence, in the region of an apex, the substructure is formed as a recess, and
3) the nanostructures extend laterally by at most 5 μ
m.
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Abstract
An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.
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Citations
12 Claims
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1. An optoelectronic semiconductor chip comprising:
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a semiconductor layer stack and a radiation exit or entrance face, wherein the semiconductor layer stack comprises an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of said nanostructures comprising at least one substructure, wherein
1) the nanostructures are of pyramidal construction and hexagonal in shape when seen in top view,
2) in a region of a center of each pyramid, and, hence, in the region of an apex, the substructure is formed as a recess, and
3) the nanostructures extend laterally by at most 5 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An optoelectronic semiconductor chip comprising:
a semiconductor layer stack and a radiation exit face, wherein the semiconductor layer stack comprises an active layer that generates electromagnetic radiation, a plurality of nanostructures arranged on the radiation exit face, at least some of said nanostructures comprising at least one substructure, the nanostructures each extend laterally by at most 2 μ
m,the nanostructures are produced by metal organic vapor phase epitaxy, molecular beam epitaxy or liquid phase epitaxy, shape and size of the nanostructures and substructures being established by said method, the substructures comprise vertical flanks, the nanostructures are pyramidal and of hexagonal shape, seen in top view. the substructure is formed in a region of a center of each pyramid and, thus, in the region of an apex, and the substructure is formed as a recess of circular shape, seen in top view.
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9. A method of producing an optoelectronic semiconductor chip comprising:
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forming a semiconductor layer stack comprising an active layer that generates or receives electromagnetic radiation, forming nanostructures on the semiconductor layer stack or in the semiconductor layer stack, and forming at least one substructure in at least some of the nanostructures. wherein the nanostructures are produced by metal organic vapor phase epitaxy molecular beam epitaxy or liquid phase epitaxy, shape and size of the nanostructures and of the substructures being established directly by said method, and wherein the nanostructures extend laterally by at most 5 μ
m. - View Dependent Claims (10, 11, 12)
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Specification