Semiconductor light emitting device and method of manufacturing the same

• US 8,884,315 B2
• Filed: 04/11/2005
• Issued: 11/11/2014
• Est. Priority Date: 04/23/2004
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Harada, Mitsunori
• Primary Examiner(s): HA, NATHAN W
• Application Number:
  US11/102,929
• Publication Number:
  US 20050253153A1
• Time in Patent Office: 3,501 Days
• Field of Search: 257/89, 385/122, 385/129
• US Class Current: 257/89
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/644 in intimate contact or integrated with parts of the device other than the semiconductor body

Abstract

A semiconductor light emitting device can include a base having a cavity provided for housing an LED chip and a resin spacer therein. The resin spacer can be composed of at least two layers of spacers including a transparent resin spacer and a wavelength conversion spacer mixed with a fluorescent material and formed to have an almost constant thickness. The wavelength conversion spacer can include a metallic radiation mesh or radiation wire disposed therein.

Claims

1. A semiconductor light emitting device, comprising:

a base having a cavity provided therein;

an LED chip located adjacent the base;

a spacer located adjacent the base, the spacer including at least two layers in the cavity, including

a transparent resin spacer in a first portion of the cavity, and

a wavelength conversion spacer in a second portion of the cavity and including a fluorescent material and having a substantially constant thickness, wherein the wavelength conversion spacer includes one of a metallic radiation mesh and a radiation wire.

2. The semiconductor light emitting device according to claim 1, wherein the one of the radiation mesh and radiation wire has a portion mechanically connected to the base.

3. The semiconductor light emitting device according to claim 1, wherein the one of the radiation mesh and radiation wire is composed of any one of gold, aluminum and copper.

4. The semiconductor light emitting device according to claim 1, wherein the fluorescent material is mixed within resin of the wavelength conversion spacer.

5. The semiconductor light emitting device according to claim 1, wherein the one of the radiation mesh and radiation wire is disposed in the wavelength conversion spacer.

6. The semiconductor light emitting device according to claim 1, further comprising:

a wiring pad located on a top surface of the base.

7. The semiconductor light emitting device according to claim 1, further comprising:

a wiring pad located at a bottom portion of the base.

8. The semiconductor light emitting device according to claim 7, wherein the wiring pad is located under the LED chip.

9. The semiconductor device according to claim 1, wherein the transparent resin spacer is disposed between the LED chip and the wavelength conversion spacer.

10. A semiconductor light emitting device, comprising:

a base having a cavity provided therein;

an LED chip located adjacent the base;

a transparent layer located adjacent the base,

a wavelength conversion layer located adjacent the transparent layer and including a fluorescent material,

a step formed between the transparent layer and the wavelength conversion layer, and

one of a metallic radiation mesh and a radiation wire spanning the cavity of the base.

11. The semiconductor light emitting device according to claim 10, wherein the one of the radiation mesh and radiation wire has a portion mechanically connected to the base.

12. The semiconductor light emitting device according to claim 10, wherein the one of the radiation mesh and radiation wire is composed of any one of gold, aluminum and copper.

13. The semiconductor light emitting device according to claim 10, wherein the one of the radiation mesh and radiation wire is disposed in the wavelength conversion spacer.

14. A semiconductor light emitting device, comprising:

a base having a first cavity provided therein, the first cavity having a first depth and a diameter that varies continuously along the first depth between a minimum diameter and a maximum diameter;

an LED chip located adjacent the base in the first cavity;

a second cavity formed above the first cavity, the second cavity having a second depth and a substantially constant diameter as measured along the second depth where the substantially constant diameter is greater than each of the minimum diameter and the maximum diameter;

a spacer located adjacent the base, the spacer including at least two layers, including

a transparent resin spacer formed within the first cavity, and

a wavelength conversion spacer formed within the second cavity and including a fluorescent material and having a substantially constant thickness, wherein the wavelength conversion spacer is embedded with one of a metallic radiation mesh and a radiation wire.

15. The semiconductor device according to claim 14, wherein the one of a metallic radiation mesh and radiation wire is thermally coupled to the base.

16. The semiconductor device according to claim 14, wherein the second cavity defines a step formed between the first cavity and the second cavity.