Semiconductor light emitting device and method for manufacturing same

• US 8,884,327 B2
• Filed: 09/21/2010
• Issued: 11/11/2014
• Est. Priority Date: 06/03/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sugizaki, Yoshiaki, Shibata, Hideki, Kojima, Akihiro, Ishikawa, Masayuki, Tamura, Hideo, Komatsu, Tetsuro
• Primary Examiner(s): STARK, JARRETT J
• Application Number:
  US12/886,709
• Publication Number:
  US 20110297980A1
• Time in Patent Office: 1,512 Days
• Field of Search: 257/91, 257/99, 257/774, 257/778, 257/E33.056, 257/E33.06, 257/E33.067
• US Class Current: 257/99
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0066 with a substrate not being a III-V compound
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.

Claims

1. A semiconductor light emitting device comprising:

a light emitting chip including;

a semiconductor layer including a light emitting layer, a first major surface, a second major surface opposite to the first major surface, and a side face continued from the first major surface, the semiconductor layer not including a substrate on the first major surface side;

a first electrode provided on the second major surface in a region including the light emitting layer;

a second electrode provided on the second major surface,

an insulating layer provided on the second major surface side of the semiconductor layer and covering the side face continued from the first major surface of the semiconductor layer;

a first interconnect layer provided on a face of the insulating layer on a side opposite to the semiconductor layer to connect to the first electrode;

a second interconnect layer provided on a face of the insulating layer on the side opposite to the semiconductor layer to connect to the second electrode, a portion of the second interconnect layer extending on the insulating layer to a position to overlay the light emitting layer;

a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode;

a second metal pillar provided on the face of the second interconnect layer on the side opposite to the second electrode; and

a resin layer provided between the first metal pillar and the second metal pillar; and

a fluorescent material layer provided on the first major surface side without a substrate between the first major surface and the fluorescent material layer, the fluorescent material layer having a larger planer size than the insulating layer and the semiconductor layer, the fluorescent material layer protruding outside the insulating layer in a direction parallel to the first major surface, the insulating layer covering the side face of the semiconductor layer provided below the fluorescent material layer, a part of the fluorescent material layer covering the side face of the semiconductor layer via the insulating layer.

2. The device of claim 1, wherein the fluorescent material layer has a stacked structure of a plurality of fluorescent material layers having mutually different fluorescence peak wavelengths.

3. The device of claim 2, wherein among the plurality of fluorescent material layers, a fluorescent material layer provided closer to the first major surface side has relatively a longer fluorescence peak wavelength.

4. The device of claim 2, wherein the plurality of fluorescent material layers include:

a first fluorescent material layer provided on the first major surface and having a protruding portion on a side opposite to the first major surface; and

a second fluorescent material layer provided on the first fluorescent material layer and covering an upper face and a side face of the protruding portion.

5. The device of claim 4, wherein the side face of the protruding portion is provided outside a side face of the light emitting chip.

6. The device of claim 1, wherein a surface area of the first electrode is greater than a surface area of the second electrode.

7. The device of claim 1, wherein a contact surface area between the second interconnect layer and the second metal pillar is greater than a contact surface area between the second interconnect layer and the second electrode.

8. The device of claim 1, wherein each of a thickness of the first metal pillar and a thickness of the second metal pillar is thicker than a thickness of a stacked body including the semiconductor layer, the first electrode, the second electrode, and the insulating layer.

9. The device of claim 1, wherein the first metal pillar has a connectable end portion, and the second metal pillar has a connectable end portion.

10. The device of claim 9, wherein the semiconductor layer is formed on a substrate and separated from the substrate.

11. The device of claim 10, wherein the semiconductor layer is crystal-grown on the substrate and separated from the substrate for crystal growth.

12. The device of claim 1, wherein the fluorescent material layer is provided on the first major surface side without support of a container.

13. The device of claim 1, wherein the fluorescent material layer protrudes outside the insulating layer in a direction from the first major surface side toward the second major surface side.

14. The device of claim 1, wherein the insulating layer has a different material from the resin layer.

15. A semiconductor light emitting device comprising:

a light emitting chip including;

a semiconductor layer including a light emitting layer, a first major surface, a second major surface opposite to the first major surface, and a side face continued from the first major surface, the semiconductor layer not including a substrate on the first major surface side;

a first electrode provided on the second major surface in a region including the light emitting layer;

a second electrode provided on the second major surface,

an insulating layer provided on the second major surface side of the semiconductor layer and covering the side face continued from the first major surface of the semiconductor layer, the insulating layer having a polyimide layer or silicon oxide layer;

a first interconnect layer provided on a face of the insulating layer on a side opposite to the semiconductor layer to connect to the first electrode;

a second interconnect layer provided on a face of the insulating layer on the side opposite to the semiconductor layer to connect to the second electrode, a portion of the second interconnect layer extending on the insulating layer to a position to overlay the light emitting layer;

a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode;

a second metal pillar provided on the face of the second interconnect layer on the side opposite to the second electrode; and

a resin layer provided between the first metal pillar and the second metal pillar; and

a fluorescent material layer provided on the first major surface side without a substrate between the first major surface and the fluorescent material layer, the fluorescent material layer having a larger planer size than the insulating layer and the semiconductor layer, the fluorescent material layer protruding outside the insulating layer in a direction parallel to the first major surface, the insulating layer covering the side face of the semiconductor layer provided below the fluorescent material layer.

16. The device of claim 15, wherein a part of the fluorescent material layer on an outer circumference side of the light emitting chip in a direction protrudes from the first major surface to the insulating layer side.

17. The device of claim 16, wherein the part of the fluorescent material layer covers the side face of the semiconductor layer.

18. The device of claim 17, wherein the part of the fluorescent material layer covers the side face of the semiconductor layer via the insulating layer.

19. The device of claim 15, wherein the fluorescent material layer has a stacked structure of a plurality of fluorescent material layers having mutually different fluorescence peak wavelengths.

20. The device of claim 19, wherein among the plurality of fluorescent material layers, a fluorescent material layer provided closer to the first major surface side has relatively a longer fluorescence peak wavelength.

21. The device of claim 19, wherein the plurality of fluorescent material layers include:

a first fluorescent material layer provided on the first major surface and having a protruding portion on a side opposite to the first major surface; and

a second fluorescent material layer provided on the first fluorescent material layer and covering an upper face and a side face of the protruding portion.

22. The device of claim 21, wherein the side face of the protruding portion is provided outside a side face of the light emitting chip.

23. The device of claim 15, wherein a surface area of the first electrode is greater than a surface area of the second electrode.

24. The device of claim 15, wherein a contact surface area between the second interconnect layer and the second metal pillar is greater than a contact surface area between the second interconnect layer and the second electrode.

25. The device of claim 15, wherein each of a thickness of the first metal pillar and a thickness of the second metal pillar is thicker than a thickness of a stacked body including the semiconductor layer, the first electrode, the second electrode, and the insulating layer.

26. The device of claim 15, wherein the insulating layer has a different material from the resin layer.