Semiconductor device with improved robustness
First Claim
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1. A semiconductor device, comprising a semiconductor body comprising:
- a first surface defining a vertical direction;
a drift region of a first conductivity type comprising a first maximum doping concentration and being arranged below the first surface; and
,a semiconductor layer of the first conductivity type comprising a second maximum doping concentration which is lower than the first maximum doping concentration, the semiconductor layer adjoining the drift region and being arranged below the drift region, the semiconductor body further comprising in a vertical cross-section;
a first body region of a second conductivity type adjoining the drift region, a source region of the first conductivity type adjoining the first body region and being arranged between the first surface and the first body region;
a vertical trench extending from the first surface at least to the semiconductor layer, adjoining the source region, the first body region and the drift region, and comprising an insulated gate electrode;
a first contact comprising at the first surface a first minimum width and being in low Ohmic contact with the source region and the first body region;
a second body region of the second conductivity type which forms a pn-junction only with the drift region; and
,a second contact in low Ohmic contact with the second body region and comprising at the first surface a second minimum width which is larger than the first minimum width.
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Abstract
A semiconductor device includes a first contact in low Ohmic contact with a source region of the device and a first portion of a body region of the device formed in an active area of the device, and a second contact in low Ohmic contact with a second portion of the body region formed in a peripheral area of the device. The minimum width of the second contact at a first surface of the device is larger than the minimum width of the first contact at the first surface so that maximum current density during commutating the semiconductor device is reduced and thus the risk of device damage during hard commutating is also reduced.
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Citations
22 Claims
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1. A semiconductor device, comprising a semiconductor body comprising:
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a first surface defining a vertical direction; a drift region of a first conductivity type comprising a first maximum doping concentration and being arranged below the first surface; and
,a semiconductor layer of the first conductivity type comprising a second maximum doping concentration which is lower than the first maximum doping concentration, the semiconductor layer adjoining the drift region and being arranged below the drift region, the semiconductor body further comprising in a vertical cross-section; a first body region of a second conductivity type adjoining the drift region, a source region of the first conductivity type adjoining the first body region and being arranged between the first surface and the first body region; a vertical trench extending from the first surface at least to the semiconductor layer, adjoining the source region, the first body region and the drift region, and comprising an insulated gate electrode; a first contact comprising at the first surface a first minimum width and being in low Ohmic contact with the source region and the first body region; a second body region of the second conductivity type which forms a pn-junction only with the drift region; and
,a second contact in low Ohmic contact with the second body region and comprising at the first surface a second minimum width which is larger than the first minimum width. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A MOSFET, comprising a semiconductor body comprising:
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a first surface defining a vertical direction; a body region; and
,a drift region forming a pn-junction with the body region, the semiconductor body further comprising in a vertical cross-section; an active area comprising a source region extending to the first surface and forming a further pn-junction with a first portion of the body region, a first vertical trench which extends from the first surface at least into the drift region, adjoins the first portion of the body region and comprises an insulated gate electrode, and a first contact in low Ohmic contact with the source region and the first portion of the body region, the first contact comprising at the first surface a first minimum width; a peripheral area comprising a second portion of the body region which extends to the first surface, a second vertical trench which extends from the first surface into the drift region, adjoins the second portion of the body region and comprises an insulated field electrode, and a second contact in low Ohmic contact with the second portion of the body region and comprising at the first surface a second minimum width which is larger than the first minimum width; and
,a third vertical trench which extends from the first surface into the drift region, adjoins the first portion and the second portion of the body region, and comprises an insulated gate electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification