Semiconductor device with field-plate electrode
First Claim
1. A semiconductor device comprising:
- a drain layer of a first conductivity type;
a drift layer of the first conductivity type provided on the drain layer;
a base region of a second conductivity type provided on the drift layer;
a source region of the first conductivity type selectively provided on a surface of the base region;
a first gate electrode contacting the source region, the base region, and the drift layer via a first insulating film;
a field-plate electrode provided under the first gate electrode via a second insulating film, the field-plate electrode contacting the drift layer via the second insulating film;
a second gate electrode contacting the source region, the base region, and the drift layer via a third insulating film, and the second gate electrode being positioned between the first gate electrodes;
a drain electrode connected to the drain layer; and
a source electrode connected to the source region and the base region.
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Abstract
A semiconductor device includes: a drain layer; a drift layer provided on the drain layer; a base region provided on the drift layer; a source region selectively provided on a surface of the base region; a first gate; a field-plate; a second gate; a drain electrode; and a source electrode. The first gate electrode is provided in each of a plurality of first trenches via a first insulating film. The first trenches penetrate from a surface of the source region through the base region and contact the drift layer. The field-plate electrode is provided in the first trench under the first gate electrode via a second insulating film. The second gate electrode is provided in a second trench via a third insulating film. The second trench penetrates from the surface of the source region through the base region and contacts the drift layer between the first trenches.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a drain layer of a first conductivity type; a drift layer of the first conductivity type provided on the drain layer; a base region of a second conductivity type provided on the drift layer; a source region of the first conductivity type selectively provided on a surface of the base region; a first gate electrode contacting the source region, the base region, and the drift layer via a first insulating film; a field-plate electrode provided under the first gate electrode via a second insulating film, the field-plate electrode contacting the drift layer via the second insulating film; a second gate electrode contacting the source region, the base region, and the drift layer via a third insulating film, and the second gate electrode being positioned between the first gate electrodes; a drain electrode connected to the drain layer; and a source electrode connected to the source region and the base region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a drain layer of a first conductivity type; a drift layer of the first conductivity type provided on the drain layer; a drift region of a second conductivity type provided on the drift layer; a source region of the first conductivity type provided on a surface of the base region; a contact region contacting the source region and the base region; a field-plate electrode provided under the contact region, and the field-plate electrode contacting the drift region via a second insulating film; a gate electrode contacting the source region, the base region, and the drift layer via the third insulating film, and the gate electrode being positioned between the contact regions; a drain electrode connected to the drain layer; and a source electrode connected to the source region and the contact region. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification