Guard trench
First Claim
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1. A device comprising:
- a substrate formed of a first semiconductor material;
a guard trench formed in the substrate;
a first trench formed proximate the guard trench and disposed on a first side of the guard trench;
an oxide layer formed at least partially in the guard trench, wherein the oxide layer is disposed on two opposing sidewalls of the guard trench and extends continuously from the guard trench to the first trench; and
a second semiconductor material formed upon the oxide layer,wherein the oxide layer comprises an undercut on a second side of the guard trench that is opposite the first side.
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Accused Products
Abstract
A device may comprise a substrate formed of a first semiconductor material, a first trench formed in the substrate, a second trench formed in the substrate proximate the first trench, an oxide layer formed in the first trench and the second trench, and a second semiconductor material formed upon the oxide layer. The oxide layer in the second trench may be adapted to mitigate undercut of the oxide layer in the first trench during an etching process.
132 Citations
27 Claims
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1. A device comprising:
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a substrate formed of a first semiconductor material; a guard trench formed in the substrate; a first trench formed proximate the guard trench and disposed on a first side of the guard trench; an oxide layer formed at least partially in the guard trench, wherein the oxide layer is disposed on two opposing sidewalls of the guard trench and extends continuously from the guard trench to the first trench; and a second semiconductor material formed upon the oxide layer, wherein the oxide layer comprises an undercut on a second side of the guard trench that is opposite the first side. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A system comprising:
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an actuator device comprising a substrate formed of a first semiconductor material; a guard trench formed in the substrate; a first trench formed proximate the guard trench and disposed on a first side of the guard trench; an oxide layer formed in part in the guard trench, wherein the oxide layer is disposed on two opposing sidewalls of the guard trench and extends from the guard trench to the first trench; and a second semiconductor material formed upon the oxide layer, wherein the oxide layer comprises an undercut on a second side of the guard trench that is opposite to the first side. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method, comprising:
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forming a guard trench in a substrate formed of a first semiconductor material; forming a first trench proximate the guard trench on a first side of the guard trench; forming an oxide layer at least partially in the guard trench, wherein the oxide layer is disposed on two opposing sidewalls of the guard trench and extends continuously from the guard trench to the first trench; forming a second semiconductor material upon the oxide layer; and etching a portion of the oxide layer, wherein the etching forms an undercut, beneath the second semiconductor material that extends at least partially into the guard trench, on a second side of the guard trench that is opposite to the first side. - View Dependent Claims (26, 27)
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Specification