Process of ultra thick trench etch with multi-slope profile
First Claim
1. An integrated chip (IC) having an ultra-thick metal layer, comprising:
- an inter-level dielectric layer disposed above a substrate and having a cavity with a sidewall comprising a plurality of sections, wherein respective sections have different slopes that cause the cavity to have a rounded shape; and
an ultra-thick metal layer disposed within the cavity, wherein the rounded shape of the cavity reduces stress between the inter-level dielectric layer and the ultra-thick metal layer.
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Accused Products
Abstract
The present disclosure relates to an integrated chip (IC) having an ultra-thick metal layer formed in a metal layer trench having a rounded shape that reduces stress between an inter-level dielectric (ILD) layer and an adjacent metal layer, and a related method of formation. In some embodiments, the IC has an inter-level dielectric layer disposed above a semiconductor substrate. The ILD layer has a cavity with a sidewall having a plurality of sections, wherein respective sections have different slopes that cause the cavity to have a rounded shape. A metal layer is disposed within the cavity. The rounded shape of the cavity reduces stress between the ILD layer and the metal layer to prevent cracks from forming along an interface between the ILD layer and the metal layer.
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Citations
13 Claims
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1. An integrated chip (IC) having an ultra-thick metal layer, comprising:
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an inter-level dielectric layer disposed above a substrate and having a cavity with a sidewall comprising a plurality of sections, wherein respective sections have different slopes that cause the cavity to have a rounded shape; and an ultra-thick metal layer disposed within the cavity, wherein the rounded shape of the cavity reduces stress between the inter-level dielectric layer and the ultra-thick metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An integrated chip (IC) having an ultra-thick copper metal layer, comprising:
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an inter-level dielectric layer disposed above a substrate and having a cavity with a sidewall comprising a plurality of sections, wherein the plurality of sections form sidewall angles with respect to the substrate that increase as a distance of a section from the substrate increases, thereby giving the cavity a rounded shape; and an ultra-thick copper metal layer disposed within the cavity, wherein the rounded shape of the cavity reduces stress between the inter-level dielectric layer and the ultra-thick copper metal layer. - View Dependent Claims (10, 11, 12, 13)
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Specification