Semiconductor device

• US 8,884,470 B2
• Filed: 09/12/2011
• Issued: 11/11/2014
• Est. Priority Date: 09/13/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nishijima, Tatsuji
• Primary Examiner(s): Deberadinis, Robert L.
• Application Number:
  US13/229,973
• Publication Number:
  US 20120062430A1
• Time in Patent Office: 1,156 Days
• Field of Search: 307/104
• US Class Current: 307/104
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29118 Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/29124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/2916 Iron [Fe] as principal constituent
• CPC Class Codes: H01L 2224/29166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/29169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/2917 Zirconium [Zr] as principal constituent
• CPC Class Codes: H01L 2224/29173 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/29178 Iridium [Ir] as principal constituent
• CPC Class Codes: H01L 2224/2918 Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/29181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/29184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/29187 Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/29188
• CPC Class Codes: H01L 2224/29188 Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 27/1225 : with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01021 : Scandium [Sc]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01Q 1/2225 : used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal

Abstract

An object is to provide a semiconductor device capable of preventing an alternating leakage current from flowing into a voltage detection circuit. The semiconductor device includes an antenna circuit, a resonance frequency regulating circuit, a voltage detection circuit, and a first capacitor. The resonance frequency regulating circuit includes a second capacitor including one terminal electrically connected to a first terminal of the antenna circuit; and a transistor including a first terminal electrically connected to the other terminal of the second capacitor, a second terminal electrically connected to a second terminal of the antenna circuit, and a gate electrically connected to the first capacitor and the voltage detection circuit.

Claims

1. A semiconductor device comprising:

an antenna circuit;

a voltage detection circuit comprising;

a first transistor including a first terminal and a second terminal; and

a resistor including a first terminal and a second terminal, the first terminal of the resistor being electrically connected to the second terminal of the first transistor;

a first capacitor including a first terminal electrically connected to the second terminal of the first transistor and the first terminal of the resistor, and a second terminal electrically connected to a wiring; and

a resonance frequency regulating circuit comprising;

a second capacitor including a first terminal electrically connected to a first terminal of the antenna circuit; and

a second transistor including a first terminal electrically connected to a second terminal of the second capacitor, a second terminal electrically connected to a second terminal of the antenna circuit, and a gate electrically connected to the first terminal of the first capacitor and the voltage detection circuit.

2. The semiconductor device according to claim 1,

wherein the second transistor comprises an oxide semiconductor layer as a semiconductor layer.

3. The semiconductor device according to claim 1,

wherein resonance frequency of the antenna circuit is varied by the voltage detection circuit.

4. The semiconductor device according to claim 1,

wherein the voltage detection circuit monitors a drive voltage generated on the basis of a signal received by the antenna circuit, and controls the resonance frequency regulating circuit when the drive voltage reaches a predetermined value, thereby varying resonance frequency of the antenna circuit.

5. The semiconductor device according to claim 1,

wherein the wiring is configured to supply with a low supply voltage Vss.

6. The semiconductor device according to claim 1, wherein the first capacitor is configured to set an impedance between the second terminal of the first capacitor and the wiring lower than an impedance between the first terminal of the first capacitor and the voltage detection circuit.

7. The semiconductor device according to claim 1, wherein the first capacitor is configured to pass an alternating leakage current that occurs in the resonance frequency regulating circuit to the wiring.

8. A semiconductor device comprising:

an antenna circuit;

a voltage detection circuit comprising;

a first transistor including a first terminal and a second terminal; and

a first resistor including a first terminal and a second terminal, the first terminal of the first resistor being electrically connected to the second terminal of the first transistor;

a first capacitor including a first terminal, and a second terminal electrically connected to a wiring;

a second resistor including a first terminal electrically connected to the second terminal of the first transistor and the first terminal of the first resistor, and a second terminal electrically connected to the first terminal of the first capacitor; and

a resonance frequency regulating circuit comprising;

a second capacitor including a first terminal electrically connected to a first terminal of the antenna circuit; and

a second transistor including a first terminal electrically connected to a second terminal of the second capacitor, a second terminal electrically connected to a second terminal of the antenna circuit, and a gate electrically connected to the first terminal of the first capacitor and the second terminal of the second resistor.

9. The semiconductor device according to claim 8,

wherein the second transistor comprises an oxide semiconductor layer as a semiconductor layer.

10. The semiconductor device according to claim 8,

wherein resonance frequency of the antenna circuit is varied by the voltage detection circuit.

11. The semiconductor device according to claim 8,

wherein the voltage detection circuit monitors a drive voltage generated on the basis of a signal received by the antenna circuit, and controls the resonance frequency regulating circuit when the drive voltage reaches a predetermined value, thereby varying resonance frequency of the antenna circuit.

12. The semiconductor device according to claim 8,

wherein the wiring is configured to supply with a low supply voltage Vss.

13. The semiconductor device according to claim 8, wherein the second resistor is configured to set an impedance between the first terminal of the first capacitor and the voltage detection circuit higher than an impedance between the second terminal of the first capacitor and the wiring.

14. The semiconductor device according to claim 8, wherein the first capacitor is configured to pass an alternating leakage current that occurs in the resonance frequency regulating circuit to the wiring.

15. A semiconductor device comprising:

an antenna circuit;

a resonance frequency regulating circuit configured to vary resonance frequency of the antenna circuit;

a voltage detection circuit configured to control the resonance frequency regulating circuit and comprising;

a transistor including a first terminal and a second terminal; and

a resistor including a first terminal and a second terminal, the first terminal of the resistor being electrically connected to the second terminal of the transistor; and

a capacitor including a first terminal electrically connected to the resonance frequency regulating circuit and the second terminal of the transistor and the first terminal of the resistor of the voltage detection circuit, and a second terminal electrically connected to a wiring.

16. The semiconductor device according to claim 15,

wherein electric power of a carrier wave or an amplitude modulation wave received by the antenna circuit is reduced by varying the resonance frequency of the antenna circuit.

17. The semiconductor device according to claim 15,

wherein the voltage detection circuit monitors a drive voltage generated on the basis of a signal received by the antenna circuit, and controls the resonance frequency regulating circuit when the drive voltage reaches a predetermined value, thereby varying the resonance frequency of the antenna circuit.

18. The semiconductor device according to claim 15, wherein the wiring is configured to supply with a low supply voltage Vss.

19. The semiconductor device according to claim 15, wherein the capacitor is configured to set an impedance between the second terminal of the capacitor and the wiring lower than an impedance between the first terminal of the capacitor and the voltage detection circuit.

20. The semiconductor device according to claim 15, wherein the capacitor is configured to pass an alternating leakage current that occurs in the resonance frequency regulating circuit to the wiring.

21. A semiconductor device comprising:

an antenna circuit;

a resonance frequency regulating circuit configured to vary resonance frequency of the antenna circuit;

a voltage detection circuit configured to control the resonance frequency regulating circuit and comprising;

a transistor including a first terminal and a second terminal; and

a first resistor including a first terminal and a second terminal, the first terminal of the first resistor being electrically connected to the second terminal of the transistor;

a capacitor including a first terminal electrically connected to the resonance frequency regulating circuit, and a second terminal electrically connected to a wiring; and

a second resistor including a first terminal electrically connected to the second terminal of the transistor and the first terminal of the first resistor of the voltage detection circuit, and a second terminal electrically connected to the first terminal of the capacitor and the resonance frequency regulating circuit.

22. The semiconductor device according to claim 21,

wherein electric power of a carrier wave or an amplitude modulation wave received by the antenna circuit is reduced by varying the resonance frequency of the antenna circuit.

23. The semiconductor device according to claim 21,

wherein the voltage detection circuit monitors a drive voltage generated on the basis of a signal received by the antenna circuit, and controls the resonance frequency regulating circuit when the drive voltage reaches a predetermined value, thereby varying the resonance frequency of the antenna circuit.

24. The semiconductor device according to claim 21, wherein the wiring is configured to supply with a low supply voltage Vss.

25. The semiconductor device according to claim 21, wherein the second resistor is configured to set an impedance between the first terminal of the capacitor and the voltage detection circuit higher than an impedance between the second terminal of the capacitor and the wiring.

26. The semiconductor device according to claim 21, wherein the capacitor is configured to pass an alternating leakage current that occurs in the resonance frequency regulating circuit to the wiring.