Resistor thin film MTP memory
First Claim
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1. An Integrated circuit die comprising:
- a memory cell including;
a first thin film adjustable resistor;
a second thin film adjustable resistor; and
a data writing circuit coupled to the memory cell and configured to write data to the memory cell by altering the resistance of the first thin film adjustable resistor and to erase data from the memory cell by altering the resistance of the second thin film adjustable resistor.
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Abstract
An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has two adjustable resistors and two heating elements. A dielectric material separates the heating elements from the adjustable resistors. One heating element alters the resistance of one of the resistors by applying heat thereto to write data to the memory cell. The other heating element alters the resistance of the other resistor by applying heat thereto to erase data from the memory cell.
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Citations
6 Claims
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1. An Integrated circuit die comprising:
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a memory cell including; a first thin film adjustable resistor; a second thin film adjustable resistor; and a data writing circuit coupled to the memory cell and configured to write data to the memory cell by altering the resistance of the first thin film adjustable resistor and to erase data from the memory cell by altering the resistance of the second thin film adjustable resistor. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification