Method for reducing stress in porous dielectric films

• US 8,889,233 B1
• Filed: 03/06/2006
• Issued: 11/18/2014
• Est. Priority Date: 04/26/2005
• Status: Active Grant

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Kelman, Maxim, Shrinivasan, Krishnan, Wang, Feng, Lu, Victor, Chang, Sean, Lu, Guangquan
• Primary Examiner(s): LIGHTFOOT, ELENA TSOY
• Application Number:
  US11/369,311
• Time in Patent Office: 3,179 Days
• Field of Search: 427/487, 427/508
• US Class Current: 427/508
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/68764 characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
• CPC Class Codes: H01L 21/68771 characterised by supporting more than one semiconductor substrate

Abstract

The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multi-step ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated at each step. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first step to facilitate removal of the porogen and create a porous dielectric film. In a second step, the film is exposed to UV radiation to increase crosslinking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Claims

1. A method of preparing a porous low-k dielectric material on a substrate, the method comprising:

(a) providing a substrate having a precursor film thereon, the precursor film comprising a porogen and a structure former, wherein the precursor film is formed on the substrate through a vapor deposition method;

(b) exposing the precursor film to ultraviolet radiation at a first UV power, wherein the ultraviolet radiation at the first UV power preferentially acts to perform porogen removal over cross-linking and thereby create voids within the dielectric material to form the porous low-k dielectric material; and

(c) exposing the dielectric material to ultraviolet radiation at a second UV bower to increase cross-linking within the dielectric material, wherein the second UV power is greater than the first UV power.

2. The method of claim 1 wherein the substrate temperature during (b) differs from the substrate temperature during (c).

3. The method of claim 1 wherein the UV power during (b) is between about 50-90% the UV power during (c).

4. The method of claim 1 wherein the UV power during (b) is about 60% the UV power during (c).

5. The method of claim 1 wherein substrate temperature during (b) is between about 300°

C. and 350°

C.

6. The method of claim 1 wherein the substrate temperature during (c) is greater than or equal to about 400°

C.

7. The method of claim 1 wherein the range of wavelengths of the ultraviolet radiation during (b) differs from the range of wavelengths of the ultraviolet radiation during (c).

8. The method of claim 1 wherein the substrate temperature during (b) and (c) is the same.

9. The method of claim 1 wherein (b) and (c) occur in different stations in a multi-station chamber.

24. The method of claim 1, wherein the UV radiation at the first UV power performs porogen removal through photochemically induced reactions to vaporize the porogen.

25. The method of claim 1, wherein operation (b) occurs in the presence of oxygen such that the UV radiation at the first UV power acts to produce ozone and/or oxygen radicals that oxidize the porogen.

26. The method of claim 1, wherein the porogen is organic.

10. A method of preparing a low-k material on a substrate, the method comprising:

(a) providing a precursor film on the substrate, the precursor film comprising a porogen and a structure former, wherein the precursor film is formed on the substrate through a vapor deposition method;

(b) providing the substrate to a chamber having a plurality of UV light sources;

(c) positioning the substrate under a first UV light source in the chamber;

(d) removing at least a substantial amount of the porogen by exposing the film to radiation from the first UV light source;

(e) transferring the substrate for exposure to a second UV light source in the chamber;

(f) exposing the material on the substrate to radiation from the second UV light source to increase crosslinking within the structure former, wherein at least one of a substrate temperature and UV power is greater in (f) than in (d) and wherein the chamber is a multi-station chamber and the first and second UV light sources are each located in different stations of the multi-station chamber.

11. The method of claim 10 wherein the first UV light source supplies UV radiation having a different range of wavelengths than the radiation supplied by the second UV light source.

12. The method of claim 10 wherein the UV power in (d) is less than the UV power in (f).

13. The method of claim 10 wherein the UV power in (d) is between about 50-90% the UV power in (f).

14. The method of claim 10 wherein the substrate temperature in (d) is less than the substrate temperature in (f).

15. The method of claim 10 wherein the substrate temperature in (d) is between about 300°

C. and 350°

C. and the substrate temperature in (f) is greater than or equal to about 400°

C.

16. The method of claim 10 wherein the UV power in (d) is less than the UV power in (f) and the substrate temperature in (d) is the same as in (f).

17. The method of claim 10 wherein the UV light sources are flood lamp sets.

18. The method of claim 10 wherein the UV light sources are focused lamp sets.

19. The method of claim 10 wherein the UV light sources are each equipped with an elliptical cold mirror.

22. The method of claim 10 wherein the chamber is a multi-station chamber (c) and (f) occur in different stations in a multi-station chamber.

20. A method of treating a low-k porogen-containing material on a substrate, the method comprising:

providing the substrate to a chamber having a plurality of UV light sources, wherein the low-k porogen-containing material is formed on the substrate through a vapor deposition method;

exposing the material on the substrate to a first UV light source to thereby remove a substantial amount of porogen from the low-k material, wherein the first UV light source is at a first UV power and the substrate is at a first temperature; and

after exposing the material on the substrate to the first UV light source, exposing the material on the substrate to a second UV light source, wherein the second UV light source is at a second UV power and the substrate is at a second temperature and wherein the first and second UV powers are different and the first and second temperatures are different, and further wherein the second UV power is greater than the first UV power and the second temperature is greater than the first temperature.

21. The method of claim 20 wherein exposing the material to a second UV light sources increases crosslinking within the material.

23. The method of claim 20 wherein the chamber comprises multiple unique UV exposure areas each uniquely associated with at least one of the plurality of UV light sources.