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Method for reducing stress in porous dielectric films

  • US 8,889,233 B1
  • Filed: 03/06/2006
  • Issued: 11/18/2014
  • Est. Priority Date: 04/26/2005
  • Status: Active Grant
First Claim
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1. A method of preparing a porous low-k dielectric material on a substrate, the method comprising:

  • (a) providing a substrate having a precursor film thereon, the precursor film comprising a porogen and a structure former, wherein the precursor film is formed on the substrate through a vapor deposition method;

    (b) exposing the precursor film to ultraviolet radiation at a first UV power, wherein the ultraviolet radiation at the first UV power preferentially acts to perform porogen removal over cross-linking and thereby create voids within the dielectric material to form the porous low-k dielectric material; and

    (c) exposing the dielectric material to ultraviolet radiation at a second UV bower to increase cross-linking within the dielectric material, wherein the second UV power is greater than the first UV power.

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