Method of making an insulated gate semiconductor device and structure
First Claim
Patent Images
1. A method for forming a semiconductor device comprising the steps of:
- providing a region of semiconductor material having a major surface;
forming a trench extending from the major surface;
forming a first layer overlying surfaces of the trench;
forming a spacer layer adjacent the first layer, where the spacer layer comprises a material different than the first layer, where the spacer layer is discontinuous in proximity to a lower surface of the trench;
forming a first region comprising a material different than the spacer layer in proximity to the lower surface of the trench;
forming a first electrode in a lower portion of the trench and adjacent portions of the spacer layer and the first region, where portions of the first layer are between the first electrode and the region of semiconductor material;
forming a dielectric layer above the first electrode; and
forming a second electrode adjacent the first layer and the dielectric layer, where at least a portion of the second electrode is within the trench.
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Abstract
In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.
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Citations
22 Claims
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1. A method for forming a semiconductor device comprising the steps of:
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providing a region of semiconductor material having a major surface; forming a trench extending from the major surface; forming a first layer overlying surfaces of the trench; forming a spacer layer adjacent the first layer, where the spacer layer comprises a material different than the first layer, where the spacer layer is discontinuous in proximity to a lower surface of the trench; forming a first region comprising a material different than the spacer layer in proximity to the lower surface of the trench; forming a first electrode in a lower portion of the trench and adjacent portions of the spacer layer and the first region, where portions of the first layer are between the first electrode and the region of semiconductor material; forming a dielectric layer above the first electrode; and forming a second electrode adjacent the first layer and the dielectric layer, where at least a portion of the second electrode is within the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 18, 19)
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12. A method for forming a semiconductor device comprising the steps of:
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providing a region of semiconductor material having a major surface; forming a trench extending from the major surface, where the trench has sidewall surfaces and a lower surface; forming a gate dielectric layer adjoining the sidewall surfaces and the lower surfaces; forming first spacer layers adjacent the gate dielectric layer, where forming the first spacer layers exposes a segment of the gate dielectric layer in proximity to the lower surface; removing portions of the first dielectric layer from the lower surface adjacent the first spacer layers and the region of semiconductor material; forming a first dielectric region adjoining the lower surface, where the first dielectric layer is thicker than the gate dielectric layer; forming a second dielectric layer adjacent the spacer layers; forming a first conductive region adjacent the first dielectric region and the second dielectric layer; forming a second dielectric region adjacent an upper surface of the first conductive region; removing portions of the second dielectric layer and first spacer layers adjacent upper portions of the trench; and forming a second conductive region adjacent the first dielectric layer and the second dielectric region. - View Dependent Claims (13, 14, 15, 16)
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17. A method for forming a semiconductor device comprising:
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providing a region of semiconductor material having a major surface; forming a trench extending from the major surface; forming a first layer overlying surfaces of the trench; forming a spacer layer adjacent the first layer, where the spaces layer comprises a material different than the first layer; removing portions of the first layer underlying the spacer layer to form undercut portions between the region semiconductor material and the spacer layer; forming a first region comprising a material different than the spacer layer in proximity to a lower surface of the trench and within the undercut portions; forming a first electrode in a lower portion of the trench and adjacent portions of the spacer layer and the first region; forming a dielectric layer above the first electrode; and forming a second electrode adjacent the first layer and the dielectric layer, where at least a portion of the second electrode is within the trench. - View Dependent Claims (20)
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21. A method for forming a semiconductor device comprising:
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providing a region of semiconductor material having a major surface and a trench extending from the major surface; forming a first dielectric layer overlying surfaces of the trench; forming a second dielectric layer adjacent the first dielectric layer, wherein the second dielectric layer comprises a material different than the first dielectric layer, and where the second dielectric layer is discontinuous in proximity to the lower surface of the trench; removing portions of the first dielectric layer underlying the second dielectric layer to form undercut portions between the region of semiconductor material and the spacer layer; forming a dielectric region in proximity to a lower surface of the trench and within the undercut portions, wherein at least portions of the first dielectric layer, the second dielectric layer and the dielectric region are configured as a shield isolation structure; forming a shield electrode on the shield isolation structure; and forming an insulated gate electrode in the trench above the shield electrode. - View Dependent Claims (22)
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Specification