Method and apparatus to scribe thin film layers of cadmium telluride solar cells
First Claim
1. A method of removing at least a portion of a thin film structure, the thin film structure including at least a first layer and a second layer in contact with the first layer, the method comprising:
- providing a laser pulse characterized by a temporal pulse shape having a first peak power level during a first portion and a subsequent second peak power level during a second portion;
directing the laser pulse to impinge on the thin film structure;
initiating a removal process in the first layer by initiating a dissociation reaction in the first layer during the first portion;
maintaining the dissociation reaction in the first layer during the second portion; and
terminating the removal process at the end of the second portion.
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Accused Products
Abstract
A method of laser scribing a CdTe solar cell structure includes providing a laser operable to produce an optical pulse. The optical pulse is characterized by a temporal profile having a first power level during a first portion of the optical pulse and a second power level less than the first power level during a second portion of the optical pulse. The method also includes directing the optical pulse to impinge on the CdTe solar cell structure. The CdTe solar cell structure includes a substrate, a transmission spectrum control layer adjacent the substrate; a barrier layer adjacent the transmission spectrum control layer, and a conductive layer adjacent the barrier layer. The method further includes initiating a removal process for the conductive layer and terminating the removal process prior to removing the barrier layer.
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Citations
20 Claims
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1. A method of removing at least a portion of a thin film structure, the thin film structure including at least a first layer and a second layer in contact with the first layer, the method comprising:
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providing a laser pulse characterized by a temporal pulse shape having a first peak power level during a first portion and a subsequent second peak power level during a second portion; directing the laser pulse to impinge on the thin film structure; initiating a removal process in the first layer by initiating a dissociation reaction in the first layer during the first portion; maintaining the dissociation reaction in the first layer during the second portion; and terminating the removal process at the end of the second portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of removing at least a portion of a thin film structure, the thin film structure including at least a first layer and a second layer in contact with the first layer, the method comprising:
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providing a laser pulse, with an infrared wavelength, characterized by a temporal pulse shape having a first peak power level during a first portion and a subsequent second peak power level during a second portion; directing the laser pulse to impinge on the thin film structure; initiating a removal process in the first layer by initiating a dissociation reaction in the first layer during the first portion; maintaining the dissociation reaction in the first layer during the second portion; and terminating the removal process at the end of the second portion; wherein the peak power in the first portion is at least twice the peak power in the second portion. - View Dependent Claims (10)
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11. A method of removing at least a portion of a thin film structure, the thin film structure including at least a first layer and a second layer in contact with the first layer, the method comprising:
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providing a laser pulse, with an infrared wavelength, characterized by a temporal pulse shape having a first peak power level during a first portion and a subsequent second peak power level during a second portion; directing the laser pulse to impinge on the thin film structure; initiating a removal process in the first layer by initiating a dissociation reaction in the first layer during the first portion; maintaining the dissociation reaction in the first layer during the second portion; and terminating the removal process at the end of the second portion; wherein maintaining the dissociation reaction during the second portion comprises maintaining a temperature of the first layer at a substantially constant temperature during the second portion.
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12. A method of laser scribing a CdTe solar cell structure, the method comprising:
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providing a laser operable to produce an optical pulse, with an infrared wavelength, being characterized by a temporal profile having a first power level during a first portion of the optical pulse and a second power level less than the first power level during a second portion of the optical pulse; directing the optical pulse to impinge on the CdTe solar cell structure, wherein the CdTe solar cell structure comprises a substrate, a conductive layer, and a barrier layer between the conductive layer and substrate; initiating a removal process for the conductive layer by initiating a dissociation reaction; and terminating the removal process prior to removing the barrier layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification