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Semiconductor device

  • US 8,890,158 B2
  • Filed: 06/20/2013
  • Issued: 11/18/2014
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a gate electrode over the substrate;

    a gate insulating film over the gate electrode;

    an oxide semiconductor film over the gate insulating film;

    a source and a drain over the oxide semiconductor film; and

    an insulating film over the oxide semiconductor film,wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less than or equal to 25 meV.

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