Semiconductor device
First Claim
1. A semiconductor device comprising:
- a substrate;
a gate electrode over the substrate;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
a source and a drain over the oxide semiconductor film; and
an insulating film over the oxide semiconductor film,wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less than or equal to 25 meV.
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Accused Products
Abstract
An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.
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Citations
17 Claims
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1. A semiconductor device comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a source and a drain over the oxide semiconductor film; and an insulating film over the oxide semiconductor film, wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less than or equal to 25 meV. - View Dependent Claims (2)
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3. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; and an insulating film being in contact with a part of the oxide semiconductor film, over the source electrode and the drain electrode, wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less than or equal to 25 meV. - View Dependent Claims (4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a transistor including a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an oxide semiconductor film, wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less than or equal to 25 meV. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification