Light-emitting device and method for manufacturing the same
First Claim
1. A light-emitting device comprising:
- a pixel portion comprising;
a first transistor comprising;
a first gate electrode layer; and
a first oxide semiconductor layer over the first gate electrode layer with a gate insulating layer between the first gate electrode layer and the first oxide semiconductor layer, the first oxide semiconductor layer comprising a first channel formation region; and
a driver circuit comprising;
a second transistor comprising;
a second gate electrode layer; and
a second oxide semiconductor layer over the second gate electrode layer with the gate insulating layer between the second gate electrode layer and the second oxide semiconductor layer, the second oxide semiconductor layer comprising a second channel formation region,wherein an oxide insulating layer is over the first oxide semiconductor layer and the second oxide semiconductor layer,wherein the oxide insulating layer is in contact with the first channel formation region, andwherein the oxide insulating layer comprises an opening overlapping the second channel formation region.
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Accused Products
Abstract
An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.
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Citations
20 Claims
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1. A light-emitting device comprising:
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a pixel portion comprising; a first transistor comprising; a first gate electrode layer; and a first oxide semiconductor layer over the first gate electrode layer with a gate insulating layer between the first gate electrode layer and the first oxide semiconductor layer, the first oxide semiconductor layer comprising a first channel formation region; and a driver circuit comprising; a second transistor comprising; a second gate electrode layer; and a second oxide semiconductor layer over the second gate electrode layer with the gate insulating layer between the second gate electrode layer and the second oxide semiconductor layer, the second oxide semiconductor layer comprising a second channel formation region, wherein an oxide insulating layer is over the first oxide semiconductor layer and the second oxide semiconductor layer, wherein the oxide insulating layer is in contact with the first channel formation region, and wherein the oxide insulating layer comprises an opening overlapping the second channel formation region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light-emitting device comprising:
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a first gate electrode layer over a substrate; a second gate electrode layer over the substrate; a gate insulating layer over the first gate electrode layer and the second gate electrode layer; a first source electrode layer over the gate insulating layer; a first drain electrode layer over the gate insulating layer; a first oxide semiconductor layer comprising a first channel formation region over the first source electrode layer, the first drain electrode layer and the gate insulating layer, the first oxide semiconductor layer overlapping with the first gate electrode layer, wherein the first oxide semiconductor layer is electrically connected to the first source electrode layer and the first drain electrode layer; a second oxide semiconductor layer comprising a second channel formation region over the gate insulating layer, the second oxide semiconductor layer overlapping with the second gate electrode layer; an oxide insulating layer over the gate insulating layer, the first source electrode layer, the first drain electrode layer, the first oxide semiconductor layer and the second oxide semiconductor layer, the oxide insulating layer having an opening overlapping with the second channel formation region; a second source electrode layer over the oxide insulating layer and the second oxide semiconductor layer, the second source electrode layer being electrically connected to the second oxide semiconductor layer; a second drain electrode layer over the oxide insulating layer and the second oxide semiconductor layer, the second drain electrode layer being electrically connected to the second oxide semiconductor layer; a connection electrode layer over the oxide insulating layer, the connection electrode layer being electrically connected to the first drain electrode layer; an insulating layer over the second oxide semiconductor layer, the oxide insulating layer, the second source electrode layer and the second drain electrode layer, the insulating layer being in direct contact with the second channel formation region; a color filter layer over the insulating layer; a first electrode over the color filter layer, the first electrode being electrically connected to the connection electrode layer; a light-emitting layer over the first electrode; and a second electrode over the light-emitting layer, wherein each of the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, the oxide insulating layer, the insulating layer and the first electrode has light-transmitting properties. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification