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Enhancement mode GaN HEMT device

  • US 8,890,168 B2
  • Filed: 03/15/2013
  • Issued: 11/18/2014
  • Est. Priority Date: 04/08/2009
  • Status: Active Grant
First Claim
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1. An enhancement-mode GaN transistor, comprising:

  • a substrate;

    transition layers;

    a buffer layer comprised of a III Nitride material;

    a barrier layer comprised of a III Nitride material;

    drain and source contacts;

    a gate III-V compound containing acceptor type dopant elements; and

    a gate metal that is self-aligned with the gate III-V compound,wherein the source contact serves as a field plate, whereby the field plate is disposed over the gate III-V compound and the field plate is at source potential.

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