Structure for heavy ion tolerant device, method of manufacturing the same and structure thereof
First Claim
Patent Images
1. A structure, comprising:
- a gate having a length extending in a first direction and a width extending in a second direction;
a first device having a first diffusion comprising a drain region and a source region, wherein the first diffusion has a length extending in the first direction and a width extending in the second direction;
a second device having a second diffusion comprising a drain region and a source region, wherein the second diffusion has a length extending in the first direction and a width extending in the second direction; and
a first isolation region separating the first diffusion of the first device and the second diffusion of the second device,wherein;
the first device and the second device are aligned in the second direction in an end-to-end layout along the width of the gate;
the width of the first diffusion of the first device is a first multiple of the length of the gate or of a channel length of the structure;
the width of the second diffusion of the second device is the first multiple of the length of the gate or of the channel length of the structure; and
the width of the first diffusion of the first device and the width of the second diffusion of the second device range from about 2×
to about 10×
of the length of the gate or of the channel length.
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Abstract
The invention relates to a design structure, and more particularly, to a design structure for a heavy ion tolerant device, method of manufacturing the same and a structure thereof. The structure includes a first device having a diffusion comprising a drain region and source region and a second device having a diffusion comprising a drain region and source region. The first and second device are aligned in an end-to-end layout along a width of the diffusion of the first device and the second device. A first isolation region separating the diffusion of the first device and the second device.
22 Citations
24 Claims
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1. A structure, comprising:
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a gate having a length extending in a first direction and a width extending in a second direction; a first device having a first diffusion comprising a drain region and a source region, wherein the first diffusion has a length extending in the first direction and a width extending in the second direction; a second device having a second diffusion comprising a drain region and a source region, wherein the second diffusion has a length extending in the first direction and a width extending in the second direction; and a first isolation region separating the first diffusion of the first device and the second diffusion of the second device, wherein; the first device and the second device are aligned in the second direction in an end-to-end layout along the width of the gate; the width of the first diffusion of the first device is a first multiple of the length of the gate or of a channel length of the structure; the width of the second diffusion of the second device is the first multiple of the length of the gate or of the channel length of the structure; and the width of the first diffusion of the first device and the width of the second diffusion of the second device range from about 2×
to about 10×
of the length of the gate or of the channel length. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A structure, comprising:
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a gate having a length extending in a first direction and a width extending in a second direction; a first device having a diffusion comprising a drain region and a source region, wherein the diffusion has a length extending in the first direction and a width extending in the second direction; and a second device having a diffusion comprising a drain region and a source region, wherein the second diffusion has a length extending in the first direction and a width extending in the second direction, wherein; the first and second device are aligned in an end-to-end layout along the width of the diffusion of the first device and the width of the diffusion of the second device; a first isolation region separates the diffusion of the first device and the diffusion of the second device; and the drain region of the first device is electrically connected to the source region of the second device a length of the first isolation region is about twice a channel length of the first device and second device; the width of the diffusion of the first device and the width of the diffusion of the second device range from about 6×
to about 10×
of the channel length; andthe first device and the second device have a layout such that a high energy particle passing through either the first device or the second device in a horizontal or vertical direction with respect to the channel length will not hit the other device. - View Dependent Claims (11)
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12. A structure comprising:
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a gate having a length extending in a first direction and a width extending in a second direction; a first device having a first diffusion comprising a drain region and a source region, wherein the first diffusion has a length extending in the first direction and a width extending in the second direction; a second device having a second diffusion comprising a drain region and a source region, wherein the second diffusion has a length extending in the first direction and a width extending in the second direction; and a first isolation region separating the first diffusion of the first device and the second diffusion of the second device, wherein; the first device and the second device are aligned in the second direction in an end-to-end layout along the width of the gate; the width of the first diffusion of the first device is a first multiple of the length of the gate or of a channel length of the structure; the width of the second diffusion of the second device is the first multiple of the length of the gate or of the channel length of the structure; the first device and the second device are a same type device; the first isolation region is about 1×
to about 2×
of the length of the gate or the channel length;the width of the diffusion of the first device and the width of the diffusion of the second device range from about 6×
to about 10×
of the gate length or channel length;the drain region of the first device is electrically connected to the source region of the second device; and the first device and the second device have a layout such that a high energy particle passing through either the first device or the second device in a horizontal or vertical direction with respect to the length of the gate or the channel length will not hit the other device.
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13. A structure, comprising:
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a first device having a first diffusion area; a second device having a second diffusion area; a first isolation region isolating the first device from the second device; and a common gate associated with the first device and the second device, wherein; the common gate provides a channel in the diffusion area of the first device and in the diffusion area of the second device; a length of the common gate extends in a first direction that is along a length of the channel; a width of the common gate extends in a second direction that is perpendicular to the length of the channel; a width of the first diffusion area of the first device extends in the second direction; a width of the diffusion area of the second device extends in the second direction; the width of the first diffusion area is aligned with the width of the second diffusion area in an end-to-end layout along the second direction; the first isolation region extends in the first direction between the first diffusion area and the second diffusion area; the width of the first diffusion area is a first multiple of a gate length or channel length of the common gate; the width of the second diffusion area is the first multiple of the gate length or channel length of the common gate; and the width of the first diffusion area and the width of the second diffusion area range from about 2×
to about 10×
of the gate length or the channel length. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method of forming a structure, comprising:
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forming a first device with a first diffusion comprising a drain region and source region, wherein; a length of the first diffusion extends in a first direction; a width of the first diffusion extends in a second direction that is perpendicular to the first direction that is along a length of a gate; and the width of the first diffusion is a first multiple of the gate length or a channel length of the structure; forming a second device with a second diffusion comprising a drain region and source region, wherein; a length of the second diffusion extends in the first direction; a width of the second diffusion extends in the second direction; the second diffusion is aligned with the first diffusion in an end-to-end layout along the second direction; and the width of the second diffusion is the first multiple of the gate length or the channel length of the structure; and forming an isolation region separating the first diffusion and the second diffusion, wherein a width of the isolation region is a second multiple of the gate length or the channel length of the structure; wherein the width of the first diffusion and the width of the second diffusion range from about 2×
to about 10×
of the gate length or the channel length. - View Dependent Claims (20)
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21. A design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
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a first device having a first diffusion comprising a drain region and source region, wherein the first diffusion has a length extending in the first direction and a width extending in the second direction; a second device having a second diffusion comprising a drain region and source region, wherein the second diffusion has a length extending in the first direction and a width extending in the second direction; and a first isolation region separating the first diffusion and the second diffusion, wherein; the first direction extends along a gate length or channel length of the structure, the first device and the second device are aligned in an end-to-end layout along the second direction; the width of the first diffusion is a first multiple of the gate length or channel length of the design structure; the width of the second diffusion is the first multiple of the gate length or channel length of the design structure; and the width of the first diffusion and the width of the second diffusion range from about 2×
to about 10×
of the gate length or the channel length. - View Dependent Claims (22, 23, 24)
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Specification