Cylindrical bonding structure and method of manufacture

• US 8,890,336 B2
• Filed: 06/04/2008
• Issued: 11/18/2014
• Est. Priority Date: 01/07/2002
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Lee, Jin-Yuan, Chou, Chien-Kang, Lin, Shih-Hsiung, Kuo, Hsi-Shan
• Primary Examiner(s): MITCHELL, JAMES M
• Application Number:
  US12/132,628
• Publication Number:
  US 20080296761A1
• Time in Patent Office: 2,358 Days
• Field of Search: 257/737, 257/738, 257/778
• US Class Current: 257/778
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05611 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05657 Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05671 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05672 Vanadium [V] as principal constituent
• CPC Class Codes: H01L 2224/05684 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/11462 Electroplating
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/11474 Multilayer masks
• CPC Class Codes: H01L 2224/11849 Reflowing
• CPC Class Codes: H01L 2224/11906 with modification of the same mask
• CPC Class Codes: H01L 2224/13017 being non uniform along the bump connector
• CPC Class Codes: H01L 2224/13022 : the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/1308 : being stacked
• CPC Class Codes: H01L 2224/13083 : Three-layer arrangements
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/13109 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13113 : Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13118 : Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/1312 : Antimony [Sb] as principal constituent
• CPC Class Codes: H01L 2224/13123 : Magnesium [Mg] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13609 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/16237 : the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/29099 : Material
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive cylinder and a solder block. The conductive cylinder is formed over the bonding pad of the silicon chip and the solder block is attached to the upper end of the conductive cylinder. The solder block has a melting point lower than the conductive cylinder. The solder block can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive cylinders and finally a solder block is attached to the end of each conductive cylinder.

Claims

1. A chip package comprising:

a substrate comprising a first pad having a first surface with a first region, a second region and a third region between said first and second regions, and a solder mask layer on said substrate and on said first and second regions, wherein an opening defined by sidewalls of said solder mask layer exposes said third region, wherein said solder mask layer has a surface opposite from the substrate;

a chip opposite said substrate, wherein said chip comprises a second pad aligned with said third region, wherein said surface of said solder mask layer faces said chip;

a copper pillar having a first surface on said second pad and a second surface opposite said first surface and between said third region and said copper pillar;

a tin-containing cap between said copper pillar and said third region, wherein said tin-containing cap comprises a first surface in said opening and directly on said third region of said first pad, and a second surface opposite said first surface of said tin-containing cap and only on said second surface of said copper pillar, said tin-containing cap extending beyond said surface of said solder mask layer, wherein said tin-containing cap has a thickness less than that of said copper pillar and greater than a depth of said opening, wherein said tin-containing layer has a width less than a width of said opening, wherein said first pad has a sidewall with a portion not covered by said tin-containing cap but covered by said solder mask layer;

a conductive layer between said copper pillar and said tin-containing layer, in which a diameter of each of said tin-containing cap and said conductive layer is less than a diameter of said copper pillar, and a diameter of said opening defines gaps between sidewalls of said conductive layer, sidewalls of said copper pillar and said sidewalls of said solder mask layer; and

an underfill between said chip and said substrate.

2. The chip package of claim 1, wherein said tin-containing cap comprises silver.

3. The chip package of claim 1, wherein said copper pillar is electroplated.

4. The chip package of claim 1 further comprising a titanium-containing layer between said copper pillar and said second pad.

5. The chip package of claim 1 further comprising a titanium-tungsten-alloy layer between said copper pillar and said second pad.

6. The chip package of claim 1, wherein said tin-containing cap contacts said copper pillar.

7. A chip package comprising:

a substrate comprising a first pad having a top surface with a first region, a second region and a third region between said first and second regions, and a solder mask layer on said first and second regions, wherein an opening in said solder mask layer is over said third region;

a chip over said substrate, wherein said chip comprises a second pad vertically over said first pad;

a copper pillar between said third region and said second pad, wherein said copper pillar has a thickness greater than a depth of said opening, wherein a vertical distance between said copper pillar and said third region is greater than said depth of said opening;

a tin-and-gold-containing layer between said copper pillar and said third region, wherein said tin-and-gold-containing layer has a thickness less than said thickness of said copper pillar; and

an underfill between said chip and said substrate.

8. The chip package of claim 7, wherein said tin-and-gold-containing layer comprises silver.

9. The chip package of claim 7, wherein said tin-and-gold-containing layer comprises copper.

10. The chip package of claim 7, wherein said copper pillar is electroplated.

11. The chip package of claim 7 further comprising a titanium-containing layer between said copper pillar and said second pad.

12. The chip package of claim 7 further comprising a titanium-tungsten-alloy layer between said copper pillar and said second pad.

13. The chip package of claim 7 further comprising a conductive layer between said copper pillar and said tin-and-gold-containing layer.

14. The chip package of claim 7, wherein said tin-and-gold-containing layer contacts said copper pillar.

15. A chip package comprising:

a substrate comprising a first pad having a first surface with a first region, a second region and a third region between said first and second regions, and a solder mask layer on said substrate and on said first and second regions, wherein an opening defined by sidewalls of said solder mask layer exposes said third region, wherein said solder mask layer has a surface;

a chip opposite said substrate, wherein said chip comprises a second pad aligned with said third region, wherein said surface of said solder mask layer faces said chip;

a copper pillar having a first surface on said second pad and a second surface opposite said first surface and between said third region and said copper pillar;

a tin-containing cap between said copper pillar and said third region, wherein said tin-containing cap comprises a first surface in said opening and directly on said third region of said first pad, and a second surface opposite said first surface of said tin-containing cap and only on said second surface of said copper pillar, said tin-containing cap extending beyond said surface of said solder mask layer, wherein said tin-containing cap has a thickness less than a thickness of said copper pillar and greater than a depth of said opening, wherein said tin-containing cap has a width less than a width of said opening, wherein said first pad has a sidewall with a portion not covered by said tin-containing cap but covered by said solder mask layer;

a conductive layer between said copper pillar and said tin-containing layer, in which a diameter of each of said tin-containing cap and said conductive layer is less than a diameter of said copper pillar, and a diameter of said opening defines gaps between sidewalls of said conductive layer, sidewalls of said copper pillar and said sidewalls of said solder mask layer; and

an underfill between said chip and said substrate.

16. The chip package of claim 15, wherein said tin-containing cap comprises silver.

17. The chip package of claim 15, wherein said tin-containing cap comprises lead.

18. The chip package of claim 15 further comprising a titanium-containing layer between said copper pillar and said second pad.

19. The chip package of claim 15 further comprising a titanium-tungsten-alloy layer between said copper pillar and said second pad.

20. The chip package of claim 15, wherein said copper pillar is electroplated.