Semiconductor device and light-emitting device
First Claim
1. A semiconductor device comprising:
- a transistor;
a first electrode electrically connected to the transistor and serving as an electrode of a light-emitting element, the first electrode comprising a first layer and a second layer over the first layer; and
a partition layer covering an end portion of the first electrode and comprising an opening portion to expose a part of the second layer,wherein the first layer comprises a conductive substance,wherein the second layer comprises an electron transporting substance and a substance showing electron donating property to the electron transporting substance, andwherein the partition layer is in contact with a top surface of the second layer.
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Abstract
One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a transistor; a first electrode electrically connected to the transistor and serving as an electrode of a light-emitting element, the first electrode comprising a first layer and a second layer over the first layer; and a partition layer covering an end portion of the first electrode and comprising an opening portion to expose a part of the second layer, wherein the first layer comprises a conductive substance, wherein the second layer comprises an electron transporting substance and a substance showing electron donating property to the electron transporting substance, and wherein the partition layer is in contact with a top surface of the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a first transistor; a first electrode electrically connected to the first transistor and serving as an electrode of a first light-emitting element; a second transistor; a second electrode electrically connected to the second transistor and serving as an electrode of a second light-emitting element; and a partition layer covering an end portion of the first electrode and an end portion of the second electrode, wherein each of the first electrode and the second electrode comprises; a first layer comprising a conductive substance; and a second layer over the first layer, the second layer comprising an electron transporting substance and a substance showing electron donating property to the electron transporting substance, wherein the partition layer comprises at least a first opening portion to expose a part of the second layer of the first electrode and a second opening portion to expose a part of the second layer of the second electrode, wherein the partition layer is in contact with a top surface of the second layer of the first electrode and a top surface of the second layer of the second electrode, and wherein an emission color of the first light-emitting element is different from an emission color of the second light-emitting element and a thickness of the second layer of the first electrode is different from a thickness of the second layer of the second electrode. - View Dependent Claims (10, 11, 12)
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Specification