Series circuits and devices
First Claim
1. A rectifier circuit, comprising:
- a substrate comprising a member selected from the group consisting of a silicon wafer, a glass plate, a ceramic plate or disc, a plastic sheet or disc, metal foil, a metal sheet or disc, and laminated or layered combinations thereof;
first and second diode-wired thin film metal-oxide-semiconductor transistors (TFTs) in series, each diode-wired TFT having a channel in a patterned semiconductor body on the substrate, and each diode-wired TFT comprising a gate oxide layer on the patterned semiconductor body, and a gate on the gate oxide layer, the gate oxide layer of each diode-wired TFT having a same target thickness,the first diode-wired TFT receiving an alternating current and providing a first output, and the second diode-wired TFT receiving said first output and providing a rectified output, the first and second diode-wired TFTs configured to divide a first voltage differential across the rectifier circuit; and
third and fourth diode-wired TFTs in series, each of the third and fourth diode-wired TFTs having a channel in a corresponding patterned semiconductor body on the substrate, a gate oxide on the corresponding patterned semiconductor body structurally similar to the gate oxide of the first and second diode-wired TFTs, the third diode-wired TFT receiving a complementary alternating current and providing a second output, the fourth diode-wired TFT receiving said second output and having an output connected to the rectified output, the third and fourth diode-wired TFTs configured to divide a second voltage differential across the rectifier circuit.
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Accused Products
Abstract
Embodiments of the present invention relate to a rectifier circuit and methods of making the same for use in wireless devices (e.g., RFID tags). The present invention is drawn to a rectifier circuit comprising first and second diode-wired transistors in series, each having a gate oxide layers of the same target thickness. The first diode-wired transistor receives an alternating current and the second diode-wired transistor provides a rectifier output. The first and second diode-wired transistors are configured to divide between them a first voltage differential across the rectifier circuit. The gate oxides are exposed to a peak stress that is similar to a stress on the gate oxide of logic transistors made using the same process. The present invention is further drawn to a method of making a rectifier circuit, comprising printing a plurality of transistor bodies on a substrate, forming a gate oxide on each of the transistor bodies and a gate on each gate oxide, doping exposed portions of the transistor body to form first and second source/drain terminals therein, and forming interconnects electrically connecting the first source/drain terminals to the gate over the corresponding transistor body.
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Citations
29 Claims
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1. A rectifier circuit, comprising:
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a substrate comprising a member selected from the group consisting of a silicon wafer, a glass plate, a ceramic plate or disc, a plastic sheet or disc, metal foil, a metal sheet or disc, and laminated or layered combinations thereof; first and second diode-wired thin film metal-oxide-semiconductor transistors (TFTs) in series, each diode-wired TFT having a channel in a patterned semiconductor body on the substrate, and each diode-wired TFT comprising a gate oxide layer on the patterned semiconductor body, and a gate on the gate oxide layer, the gate oxide layer of each diode-wired TFT having a same target thickness, the first diode-wired TFT receiving an alternating current and providing a first output, and the second diode-wired TFT receiving said first output and providing a rectified output, the first and second diode-wired TFTs configured to divide a first voltage differential across the rectifier circuit; and third and fourth diode-wired TFTs in series, each of the third and fourth diode-wired TFTs having a channel in a corresponding patterned semiconductor body on the substrate, a gate oxide on the corresponding patterned semiconductor body structurally similar to the gate oxide of the first and second diode-wired TFTs, the third diode-wired TFT receiving a complementary alternating current and providing a second output, the fourth diode-wired TFT receiving said second output and having an output connected to the rectified output, the third and fourth diode-wired TFTs configured to divide a second voltage differential across the rectifier circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 21, 22, 27, 29)
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13. A method of making a rectifier circuit, comprising:
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a) forming one or more patterned semiconductor bodies on a substrate; b) forming a gate oxide on the one or more patterned semiconductor bodies for each of a plurality of thin film transistors (TFTs), each gate oxide having a same target thickness, and a gate on each gate oxide, thereby forming the plurality of TFTs; c) doping exposed portions of the one or more semiconductor bodies to form first and second source/drain terminals for each of the plurality of TFTs; d) forming interconnects electrically connecting each of the first source/drain terminals to a corresponding gate, thereby forming a plurality of diode-wired TFTs in series, wherein the second source/drain terminal of a first one of the plurality of diode-wired TFTs is electrically connected to the first source/drain terminal of a second one of the plurality of diode-wired TFTs and the second source/drain terminal of a third one of the plurality of diode-wired TFTs is electrically connected to the first source/drain terminal of a fourth one of the plurality of diode-wired TFTs; and e) configuring (i) the first and third diode-wired TFTs to receive an alternating current and (ii) the second and fourth diode-wired TFTs to provide a rectified output, wherein each of (i) the first and second diode-wired TFTs and (ii) the third and fourth diode-wired TFTs are configured to divide a voltage differential across the rectifier circuit. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 28)
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23. The method of 13, wherein forming said one or more patterned semiconductor bodies comprises printing a plurality of said patterned semiconductor bodies.
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24. The method of 13, wherein forming said one or more patterned semiconductor bodies comprises depositing a semiconductor thin film on the substrate and photolithographically patterning said semiconductor thin film.
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25. The method of 16, comprising forming said lower electrode substantially simultaneously with said one or more patterned semiconductor bodies, forming said capacitor dielectric layer substantially simultaneously with said gate oxide, and forming said upper electrode substantially simultaneously with said gate.
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26. The method of 13, wherein forming said interconnects comprises coating an interconnect metal precursor and locally exposing said interconnect metal precursor to laser radiation.
Specification