Integrated circuit, method for driving the same, and semiconductor device
First Claim
1. A semiconductor device comprising:
- a substrate including a semiconductor material;
a first flip-flop on the substrate,wherein the first flip-flop comprises a first transistor, andwherein a first channel formation region of the first transistor is formed in the substrate; and
a second flip-flop over the first flip-flop,wherein the second flip-flop comprises a memory circuit,wherein the memory circuit comprises a second transistor, andwherein a second channel formation region of the second transistor comprises an oxide semiconductor,wherein in an operating state in which power is supplied to the first flip-flop and the second flip-flop, the first flip-flop retains data,wherein in a resting state in which supply of power to the first flip-flop and the second flip-flop is stopped, the second flip-flop retains data,wherein on transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop, andwherein on transition from the resting state into the operating state, the data is transferred from the second flip-flop to the first flip-flop.
1 Assignment
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Accused Products
Abstract
An integrated circuit which can be switched to a resting state and can be returned from the resting state rapidly is provided. An integrated circuit whose power consumption can be reduced without the decrease in operation speed is provided. A method for driving the integrated circuit is provided. The integrated circuit includes a first flip-flop and a second flip-flop including a nonvolatile memory circuit. In an operating state in which power is supplied, the first flip-flop retains data. In a resting state in which supply of power is stopped, the second flip-flop retains data. On transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop. On return from the resting state to the operating state, the data is transferred from the second flip-flop to the first flip-flop.
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Citations
17 Claims
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1. A semiconductor device comprising:
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a substrate including a semiconductor material; a first flip-flop on the substrate, wherein the first flip-flop comprises a first transistor, and wherein a first channel formation region of the first transistor is formed in the substrate; and a second flip-flop over the first flip-flop, wherein the second flip-flop comprises a memory circuit, wherein the memory circuit comprises a second transistor, and wherein a second channel formation region of the second transistor comprises an oxide semiconductor, wherein in an operating state in which power is supplied to the first flip-flop and the second flip-flop, the first flip-flop retains data, wherein in a resting state in which supply of power to the first flip-flop and the second flip-flop is stopped, the second flip-flop retains data, wherein on transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop, and wherein on transition from the resting state into the operating state, the data is transferred from the second flip-flop to the first flip-flop. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a substrate including a semiconductor material; a first flip-flop on the substrate, wherein the first flip-flop comprises a first transistor, and wherein a first channel formation region of the first transistor is formed in the substrate; and a second flip-flop over the first flip-flop, wherein the second flip-flop comprises a memory circuit, wherein the memory circuit comprises a second transistor, and wherein a second channel formation region of the second transistor comprises an oxide semiconductor, wherein before a resting state in which supply of power to the first flip-flop and the second flip-flop is stopped, data retained in the first flip-flop is transferred to the second flip-flop, wherein in the resting state, the data is retained in the second flip-flop, and wherein after the resting state, the data in the first flip-flop is restored by the second flip-flop. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a substrate including a semiconductor material; a first flip-flop on the substrate, wherein the first flip-flop comprises a first transistor, and wherein a channel formation region of the first transistor is formed in the substrate; and a second flip-flop over the first flip-flop, wherein the second flip-flop comprises a second transistor including an oxide semiconductor in a semiconductor layer, wherein the second flip-flop includes; a memory circuit that includes the second transistor and a storage capacitor; and an arithmetic portion, wherein one electrode of the second transistor is electrically connected to a first electrode of the storage capacitor, wherein the arithmetic portion includes a third transistor, and wherein a gate electrode of the third transistor is electrically connected to the one electrode of the second transistor. - View Dependent Claims (14, 15, 16, 17)
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Specification