Method and system for dynamic word line based configuration of a three-dimensional memory device
First Claim
1. A method of operation in a storage device that includes a three-dimensional array of memory cells, including multiple blocks of memory cells, each block including a plurality of word lines arranged in different vertical positions relative to a substrate of the storage device, the method comprising:
- for a respective block of the multiple blocks, performing operations including;
configuring the plurality of word lines corresponding to the respective block in a first configuration, wherein the first configuration includes a respective set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to the substrate of the storage device;
while the plurality of word lines are configured in accordance with the first configuration, writing data to the respective block and reading data from the respective block;
in response to detecting a first trigger condition as to a respective word line of the plurality of word lines, adjusting a first parameter in the respective set of configuration parameters corresponding to the respective word line; and
after adjusting the first parameter in the respective set of configuration parameters corresponding to the respective word line, writing data to the respective word line and reading data from the respective word line.
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Abstract
A memory controller configures a plurality of word lines associated with a respective block of a 3D memory device in a first configuration, where the first configuration includes a set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to a substrate of the 3D memory device and, while the plurality of word lines are configured in the first configuration, writes data to and reads data from the respective block. For the respective block, the memory controller: adjusts a first parameter in the respective set of configuration parameters corresponding to a respective word line of the plurality of word lines in response to detecting a first trigger condition as to the respective word line and, after adjusting the first parameter, writes data to and reads data from the respective word line.
233 Citations
25 Claims
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1. A method of operation in a storage device that includes a three-dimensional array of memory cells, including multiple blocks of memory cells, each block including a plurality of word lines arranged in different vertical positions relative to a substrate of the storage device, the method comprising:
for a respective block of the multiple blocks, performing operations including; configuring the plurality of word lines corresponding to the respective block in a first configuration, wherein the first configuration includes a respective set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to the substrate of the storage device; while the plurality of word lines are configured in accordance with the first configuration, writing data to the respective block and reading data from the respective block; in response to detecting a first trigger condition as to a respective word line of the plurality of word lines, adjusting a first parameter in the respective set of configuration parameters corresponding to the respective word line; and after adjusting the first parameter in the respective set of configuration parameters corresponding to the respective word line, writing data to the respective word line and reading data from the respective word line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A storage system, comprising:
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a storage device that includes a three-dimensional array of memory cells, including multiple blocks of memory cells, each block including a plurality of word lines arranged in different vertical positions relative to a substrate of the storage device; and a memory controller with one or more processors and memory storing one or more programs to be executed by the one or more processors, the one or more programs comprising instructions for; for a respective block of the multiple blocks, performing operations including; configuring the plurality of word lines corresponding to the respective block in a first configuration, wherein the first configuration includes a respective set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to the substrate of the storage device; while the plurality of word lines are configured in accordance with the first configuration, writing data to the respective block and reading data from the respective block; in response to detecting a first trigger condition as to a respective word line of the plurality of word lines, adjusting a first parameter in the respective set of configuration parameters corresponding to the respective word line; and after adjusting the first parameter in the respective set of configuration parameters corresponding to the respective word line, writing data to the respective word line and reading data from the respective word line. - View Dependent Claims (17, 18, 19, 20)
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21. A non-transitory computer readable storage medium storing one or more programs, the one or more programs comprising instructions, which, when executed by a memory controller with one or more processors, cause the memory controller to perform operations comprising:
for a respective block of a storage device, coupled with the memory controller, that includes a three-dimensional array of memory cells, including multiple blocks of memory cells, each block including a plurality of word lines arranged in different vertical positions relative to a substrate of the storage device;
performing operations including;configuring the plurality of word lines corresponding to the respective block in a first configuration, wherein the first configuration includes a respective set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to the substrate of the storage device; while the plurality of word lines are configured in accordance with the first configuration, writing data to the respective block and reading data from the respective block; in response to detecting a first trigger condition as to a respective word line of the plurality of word lines, adjusting a first parameter in the respective set of configuration parameters corresponding to the respective word line; and after adjusting the first parameter in the respective set of configuration parameters corresponding to the respective word line, writing data to the respective word line and reading data from the respective word line. - View Dependent Claims (22, 23, 24, 25)
Specification