Method for manufacturing semiconductor device with pixel electrode over gate electrode of thin film transistor
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a transparent conductive film and a first metal film sequentially over a substrate;
forming a first resist by using a first photomask which is a multi-tone mask, the first resist having different thicknesses in a first portion and in a second portion;
forming a gate electrode by shaping the transparent conductive film and the first metal film with the first resist so that a stack of the transparent conductive film and the first metal film remains in the first portion and only the transparent conductive film remains in the second portion;
forming an insulating film, a first semiconductor film, a second semiconductor film, and a second metal film sequentially over the gate electrode;
forming a second resist by using a second photomask which is a multi-tone mask, the second resist having different thicknesses in a channel region formation portion and in a source region formation portion and a drain region formation portion;
forming a first semiconductor layer, a second semiconductor layer, and a second metal layer by shaping the first semiconductor film, the second semiconductor film, and the second metal film, respectively, with the second resist;
forming a channel region, a drain region, a source region, a drain wiring, and a source wiring of a thin film transistor by etching a part of the first semiconductor layer, the second semiconductor layer, and the second metal layer in the channel region formation portion;
forming a protective film over the thin film transistor; and
forming a pixel electrode over the protective film.
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Abstract
The number of photomasks is reduced in a method for manufacturing a liquid crystal display device which operates in a fringe field switching mode, whereby a manufacturing process is simplified and manufacturing cost is reduced. A first transparent conductive film and a first metal film are sequentially stacked over a light-transmitting insulating substrate; the first transparent conductive film and the first metal film are shaped using a multi-tone mask which is a first photomask; an insulating film, a first semiconductor film, a second semiconductor film, and a second metal film are sequentially stacked; the second metal film and the second semiconductor film are shaped using a multi-tone mask which is a second photomask; a protective film is formed; the protective film is shaped using a third photomask; a second transparent conductive film is formed; and the second transparent conductive film is shaped using a fourth photomask.
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Citations
31 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a transparent conductive film and a first metal film sequentially over a substrate; forming a first resist by using a first photomask which is a multi-tone mask, the first resist having different thicknesses in a first portion and in a second portion; forming a gate electrode by shaping the transparent conductive film and the first metal film with the first resist so that a stack of the transparent conductive film and the first metal film remains in the first portion and only the transparent conductive film remains in the second portion; forming an insulating film, a first semiconductor film, a second semiconductor film, and a second metal film sequentially over the gate electrode; forming a second resist by using a second photomask which is a multi-tone mask, the second resist having different thicknesses in a channel region formation portion and in a source region formation portion and a drain region formation portion; forming a first semiconductor layer, a second semiconductor layer, and a second metal layer by shaping the first semiconductor film, the second semiconductor film, and the second metal film, respectively, with the second resist; forming a channel region, a drain region, a source region, a drain wiring, and a source wiring of a thin film transistor by etching a part of the first semiconductor layer, the second semiconductor layer, and the second metal layer in the channel region formation portion; forming a protective film over the thin film transistor; and forming a pixel electrode over the protective film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first transparent conductive film and a first metal film sequentially over a substrate; forming a first resist by using a first photomask which is a multi-tone mask, the first resist having different thicknesses in a first portion and in a second portion; forming a gate electrode by shaping the first transparent conductive film and the first metal film with the first resist so that a stack of the first transparent conductive film and the first metal film remains in the first portion and only the first transparent conductive film remains in the second portion; forming an insulating film over the gate electrode; forming a third semiconductor film over the insulating film; forming a first semiconductor film, a second semiconductor film, and a second metal film sequentially over the third semiconductor film; forming a second resist by using a second photomask which is a multi-tone mask, the second resist having different thicknesses in a channel region formation portion and in a source region formation portion and a drain region formation portion; forming a third semiconductor layer, a first semiconductor layer, a second semiconductor layer, and a second metal layer by shaping the third semiconductor film, the first semiconductor film, the second semiconductor film, and the second metal film, respectively, with the second resist; ashing the second resist to form a third resist; forming a channel region, a source region, a drain region, a source wiring, and a drain wiring of a thin film transistor by etching the third semiconductor layer, the first semiconductor layer, the second semiconductor layer, and the second metal layer with the third resist; forming a protective film over the thin film transistor; forming a fourth resist in a region so as not to cover a contact hole formation portion by using a third photomask; forming a contact hole in the protective film by shaping the protective film with the fourth resist; forming a second transparent conductive film over the protective film; forming a fifth resist in a pixel electrode formation portion by using a fourth photomask; and forming a pixel electrode by shaping the second transparent conductive film with the fifth resist. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode; forming an insulating film over the gate electrode; forming a third semiconductor film over the insulating film; forming a first semiconductor film, a second semiconductor film, and a metal film sequentially over the third semiconductor film; forming a resist by using a photomask which is a multi-tone mask, the resist having different thicknesses in a channel region formation portion and in a source region formation portion and a drain region formation portion; forming a third semiconductor layer, a first semiconductor layer, a second semiconductor layer, and a metal layer by shaping the third semiconductor film, the first semiconductor film, the second semiconductor film, and the metal film, respectively, with the resist; and forming a channel region, a source region, a drain region, a source wiring, and a drain wiring of a thin film transistor by etching the third semiconductor layer, the first semiconductor layer, the second semiconductor layer, and the metal layer. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsFujikawa, Saishi, Chiba, Yoko
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Primary Examiner(s)Swanson, Walter H
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Application NumberUS13/603,469Publication NumberTime in Patent Office811 DaysField of Search438/30, 438/158, 257/E21.411, 257/E33.053US Class Current438/30CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/1288 employing particular maskin...
