Biosensor and system and process for forming

• US 8,895,340 B1
• Filed: 09/10/2013
• Issued: 11/25/2014
• Est. Priority Date: 09/10/2013
• Status: Active Grant

• Current Assignee: Georgetown University
• Original Assignee: Georgetown University
• Inventors: Paranjape, Makarand, Liu, Yian
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): DUONG, KHANH B
• Application Number:
  US14/022,315
• Time in Patent Office: 441 Days
• Field of Search: None
• US Class Current: 438/50
• CPC Class Codes: G01N 27/4146 involving nanosized elements, e.g. nanotubes, nanowires

Abstract

A process for forming a carbon nanotube field effect transistor (CNTFET) device includes site-specific nanoparticle deposition on a CNTFET that has one or more carbon nanotubes, a source electrode, a drain electrode, and a sacrificial electrode on a substrate with an interposed dielectric layer. The process includes control of PMMA removal and electrodeposition in order to select nanoparticle size and deposition location down to singular nanoparticle deposition. The CNTFET device resulting in ultra-sensitivity for various bio-sensing applications, including detection of glucose at hypoglycemic levels.

Claims

1. A process for forming a functionalized carbon nanotube field effect transistor (CNTFET) device including site-specific nanoparticle deposition on a carbon nanotube field effect transistor (CNTFET) including one or more carbon nanotubes, a source electrode, a drain electrode, and a sacrificial electrode on a substrate with an interposed dielectric layer, the process comprising:

passivating the CNTFET with a layer of Poly(methyl methacrylate) (PMMA);

programming a processor of an electron-beam lithography system with a predetermined removal pattern;

applying electron-beam lithography using the electron-beam lithography system to the CNTFET to remove portions of the PMMA layer and expose one or more underlying portions of the one or more carbon nanotubes and the sacrificial electrode of the CNTFET in accordance with the programmed predetermined removal pattern;

applying an amount of an electrolyte solution to the CNTFET, including the exposed one or more underlying portions of the one or more carbon nanotubes and the sacrificial electrode;

applying a voltage to the sacrificial electrode while grounding the source and drain electrodes; and

electrodepositing one or more nanoparticles formed from atoms of the sacrificial electrode onto the one or more exposed portions of the one or more carbon nanotubes.

2. The process according to claim 1, further comprising:

electrodepositing a single nanoparticle onto each of the one or more exposed portions of the one or more carbon nanotubes.

3. The process according to claim 1, wherein the atoms are gold (Au) atoms and the one or more nanoparticles are gold (Au) nanoparticles.

4. The process according to claim 1, further comprising removing remaining PMMA from the CNTFET after the electrodeposition.

5. The process according to claim 1, further comprising controlling at least one of size and number of electrodeposited nanoparticles by controlling the voltage applied to the sacrificial electrode in combination with the predetermined removal pattern.

6. The process according to claim 1, wherein the programmed predetermined removal pattern instructs the electron-beam lithography system to remove PMMA from the one or more carbon nanotubes to expose a single underlying portion of the one or more carbon nanotubes having a dimension only slightly larger than a predetermined dimension of a single nanoparticle.

7. The process according to claim 1, wherein the programmed predetermined removal pattern instructs the electron-beam lithography system to remove PMMA from the one or more carbon nanotubes to expose multiple individual underlying portions of the one or more carbon nanotubes, each individual underlying portion having a dimension only slightly larger than a predetermined dimension of a single nanoparticle.

8. The process according to claim 4, further comprising depositing a protective passivation layer on the source and drain electrodes.

9. The process according to claim 3, further comprising binding a glucose oxidase molecules (GOx) to the one or more Au nanoparticles using one or more thiol linking molecules.

10. The process according to claim 1, wherein the one or more nanoparticles have a dimension in the range of 10 nanometers to 100 nanometers.

18. A microfluidic device for assessing the contents of fluid introduced thereto comprising:

at least one microfluidic channel having multiple functionalized carbon nanotube field effect transistors (CNTFET) formed in accordance with the process of claim 1 and including one or more carbon nanotubes, a source electrode, and a drain electrode formed on a substrate with an interposed dielectric layer;

a single access point formed in the microfluidic device for introducing the fluid to the at least one microfluidic channel; and

a single exit point formed in the microfluidic device for removing the fluid from the least one microfluidic channel.

19. The device of claim 18, wherein the fluid is selected from the group consisting of water, blood, interstitial fluid, saliva and urine.

20. The device of claim 18, wherein each of the multiple CNTFETs in the microfluidic channel is functionalized to assess presence of a different analyte in the fluid.

11. A process for forming a functionalized carbon nanotube field effect transistor (CNTFET) device including site-specific nanoparticle deposition on a carbon nanotube field effect transistor (CNTFET) including one or more carbon nanotubes, a source electrode, a drain electrode, and a sacrificial electrode on a substrate with an interposed dielectric layer, the process comprising:

removing portions of a protective layer covering the one or more carbon nanotubes in accordance with a predetermined removal pattern to expose one or more individual underlying portions of the one or more carbon nanotubes and to expose the sacrificial electrode of the CNTFET, wherein each of the exposed one or more individual underlying portions of the one or more carbon nanotubes has a first predetermined dimension;

applying an amount of an electrolyte solution to the CNTFET, including the exposed one or more underlying portions of the one or more carbon nanotubes and the sacrificial electrode;

applying a voltage to the sacrificial electrode while grounding the source and drain electrodes; and

electrodepositing one or more nanoparticles each having a predetermined second dimension formed from atoms of the sacrificial electrode onto the one or more exposed portions of the one or more carbon nanotubes, wherein the first predetermined dimension is only slightly larger than the second predetermined dimension.

12. The process according to claim 11, wherein the atoms are gold (Au) atoms and the one or more nanoparticles are gold (Au) nanoparticles.

13. The process according to claim 11, further comprising removing remaining protective layer from the CNTFET after the electrodeposition.

14. The process according to claim 11, further comprising controlling at least one of size and number of electrodeposited nanoparticles by controlling the voltage applied to the sacrificial electrode in combination with the predetermined removal pattern.

15. The process according to claim 13, further comprising depositing a protective passivation layer on the source and drain electrodes.

16. The process according to claim 12, further comprising binding a glucose oxidase molecules (GOx) to the one or more Au nanoparticles using one or more thiol linking molecules.

17. The process according to claim 11, wherein the first predetermined dimension and the second predetermined dimension are in the range of 10 nanometers to 100 nanometers.

21. A process for forming a functionalized carbon nanotube field effect transistor (CNTFET) device including site-specific nanoparticle deposition on a carbon nanotube field effect transistor (CNTFET) including one or more carbon nanotubes, a source electrode, a drain electrode, and at least a first and second sacrificial electrode on a substrate with an interposed dielectric layer, the process comprising:

removing portions of a protective layer covering the one or more carbon nanotubes in accordance with a first predetermined removal pattern to selectively expose a first individual underlying portion of the one or more carbon nanotubes and to selectively expose the first sacrificial electrode of the CNTFET;

applying an amount of an electrolyte solution to the CNTFET, including the exposed first underlying portion and the exposed first sacrificial electrode;

applying a first voltage to the first sacrificial electrode while grounding the source and drain electrodes;

electrodepositing one or more nanoparticles formed from first atoms of the first sacrificial electrode onto the first exposed underlying portions of the one or more carbon nanotubes;

removing portions of a protective layer covering the one or more carbon nanotubes in accordance with a second predetermined removal pattern to selectively expose a second individual underlying portion of the one or more carbon nanotubes and to selectively expose the second sacrificial electrode of the CNTFET;

applying an amount of an electrolyte solution to the CNTFET, including the exposed second underlying portion and the exposed second sacrificial electrode;

applying a second voltage to the second sacrificial electrode while grounding the source and drain electrodes; and

electrodepositing one or more nanoparticles formed from second atoms of the second sacrificial electrode onto the second exposed underlying portions of the one or more carbon nanotubes.

22. The process according to claim 21, wherein the first and second sacrificial electrodes are different and are selected from the group consisting of:

gold (Au);

silver (Ag), palladium (Pd) and platinum (Pt).

23. The process according to claim 21, further comprising controlling at least one of size and number of electrodeposited nanoparticles by controlling the first voltage applied to the first sacrificial electrode and the second voltage applied to the second sacrificial electrode in combination with the first and second predetermined removal patterns.