Multiple-gate semiconductor device and method
First Claim
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1. A method of forming a semiconductor device, the method comprising:
- providing a substrate;
forming a plurality of fins in the substrate;
forming first isolation regions in the substrate, the first isolation regions extending a first depth from a surface of the substrate;
forming second isolation regions in the substrate, the second isolation regions extending a second depth from the surface of the substrate, the second depth being less than the first depth;
forming a gate dielectric, gate electrode, and spacers over a first portion of each of the semiconductor fins and the second isolation regions while leaving a second portion of each of the semiconductor fins and the second isolation regions exposed;
removing the second portion of each of the semiconductor fins and the second isolation regions; and
forming a source/drain region, the source/drain region connecting the plurality of semiconductor fins and extending below a top surface of the second isolation regions.
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Abstract
A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate so as to avoid the formation of voids between the fins in the source/drain region.
42 Citations
20 Claims
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1. A method of forming a semiconductor device, the method comprising:
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providing a substrate; forming a plurality of fins in the substrate; forming first isolation regions in the substrate, the first isolation regions extending a first depth from a surface of the substrate; forming second isolation regions in the substrate, the second isolation regions extending a second depth from the surface of the substrate, the second depth being less than the first depth; forming a gate dielectric, gate electrode, and spacers over a first portion of each of the semiconductor fins and the second isolation regions while leaving a second portion of each of the semiconductor fins and the second isolation regions exposed; removing the second portion of each of the semiconductor fins and the second isolation regions; and forming a source/drain region, the source/drain region connecting the plurality of semiconductor fins and extending below a top surface of the second isolation regions. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a semiconductor device, the method comprising:
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forming a first isolation region in a substrate between a first fin and a second fin; forming a second isolation region in the substrate on an opposite side of the first fin from the first isolation region, wherein the second isolation region extends further into the substrate than the first isolation region; forming a gate stack over the first fin and the second fin; removing an exposed first portion of the first fin and an exposed second portion of the second fin, wherein the removing the exposed first portion of the first fin continues until the first portion of the first fin is below a top surface of the first isolation region; and growing a continuous source/drain region extending from the first fin to the second fin. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of forming a semiconductor device, the method comprising:
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depositing dielectric material into a first opening and a second opening, wherein the first opening is located between a first fin and a second fin and wherein the second opening is not located between the first fin and the second fin, the first opening extending into the substrate less than the second opening; recessing the dielectric material such that sidewalls of the first fin and the second fin are exposed; forming a gate stack over the first fin and the second fin; removing the dielectric material from a first region in the first opening exposed by the gate stack; and growing a source/drain region within the first region, the source/drain region extending between the first fin and the second fin. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification