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Methods of forming semiconductor structures

  • US 8,895,385 B2
  • Filed: 09/17/2013
  • Issued: 11/25/2014
  • Est. Priority Date: 06/15/2011
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure, the method comprising:

  • forming a through-substrate-via (TSV) structure in a substrate;

    forming a first etch stop layer over the TSV structure;

    forming a first dielectric layer in contact with the first etch stop layer;

    forming a second etch stop layer in contact with the first dielectric layer;

    forming a metal-insulator-metal (MIM) capacitor structure in contact with the second etch stop layer;

    forming a first conductive structure through the first etch stop layer and the first dielectric layer, wherein the first conductive structure is electrically coupled with the TSV structure and the TSV structure is substantially wider than the first conductive structure; and

    forming a third conductive structure between the TSV structure and the first etch stop layer, the third conductive structure being electrically coupled with the first conductive structure, wherein the third conductive structure is substantially wider than the first conductive structure.

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