Methods of forming semiconductor structures
First Claim
1. A method of forming a semiconductor structure, the method comprising:
- forming a through-substrate-via (TSV) structure in a substrate;
forming a first etch stop layer over the TSV structure;
forming a first dielectric layer in contact with the first etch stop layer;
forming a second etch stop layer in contact with the first dielectric layer;
forming a metal-insulator-metal (MIM) capacitor structure in contact with the second etch stop layer;
forming a first conductive structure through the first etch stop layer and the first dielectric layer, wherein the first conductive structure is electrically coupled with the TSV structure and the TSV structure is substantially wider than the first conductive structure; and
forming a third conductive structure between the TSV structure and the first etch stop layer, the third conductive structure being electrically coupled with the first conductive structure, wherein the third conductive structure is substantially wider than the first conductive structure.
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Abstract
A method of forming a semiconductor structure includes forming a through-substrate-via (TSV) structure in a substrate. The method includes forming a first etch stop layer over the TSV structure. The method further includes forming a first dielectric layer in contact with the first etch stop layer. The method still further includes forming a second etch stop layer in contact with the first dielectric layer. The method also includes forming a metal-insulator-metal (MIM) capacitor structure in contact with the second etch stop layer. The method further includes forming a first conductive structure through the first etch stop layer and the first dielectric layer, wherein the first conductive structure is electrically coupled with the TSV structure and the TSV structure is substantially wider than the first conductive structure.
44 Citations
20 Claims
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1. A method of forming a semiconductor structure, the method comprising:
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forming a through-substrate-via (TSV) structure in a substrate; forming a first etch stop layer over the TSV structure; forming a first dielectric layer in contact with the first etch stop layer; forming a second etch stop layer in contact with the first dielectric layer; forming a metal-insulator-metal (MIM) capacitor structure in contact with the second etch stop layer; forming a first conductive structure through the first etch stop layer and the first dielectric layer, wherein the first conductive structure is electrically coupled with the TSV structure and the TSV structure is substantially wider than the first conductive structure; and forming a third conductive structure between the TSV structure and the first etch stop layer, the third conductive structure being electrically coupled with the first conductive structure, wherein the third conductive structure is substantially wider than the first conductive structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a semiconductor structure, the method comprising:
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forming a through-substrate-via (TSV) structure in a substrate; forming a conductive structure electrically connected to the TSV structure, wherein the conductive structure is wider than the TSV structure; forming a metal-insulator-metal (MIM) capacitor structure over the substrate; forming a first dual damascene structure over and in contact with the TSV structure, wherein the dual damascene structure includes a first via portion and a first trench portion, and the first via portion is electrically connected to the conductive structure; forming a first dielectric layer disposed around the first via portion of the first dual damascene structure; and forming a second dielectric layer disposed around the first trench portion of the first dual damascene, wherein the second dielectric layer is disposed over the MIM capacitor structure. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of forming a semiconductor structure, the method comprising:
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forming a through-substrate-via (TSV) structure in a substrate; forming a first etch stop layer over the TSV structure; forming a first dual damascene structure disposed over and in contact with the TSV structure, wherein the dual damascene structure includes a first via portion and a first trench portion; forming a first dielectric layer disposed around the first via portion of the dual damascene and in contact with the first etch stop layer; forming a second etch stop layer in contact with the first dielectric layer; forming a metal-insulator-metal (MIM) capacitor structure in contact with the second etch stop layer; and
forming a second dielectric layer disposed around the first trench portion of the first dual damascene structure, wherein the second dielectric layer is disposed over the MIM capacitor structure. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification