Reduced resistance SiGe FinFET devices and method of forming same

• US 8,895,395 B1
• Filed: 06/06/2013
• Issued: 11/25/2014
• Est. Priority Date: 06/06/2013
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Kerber, Pranita, Ouyang, Qiqing C., Reznicek, Alexander
• Primary Examiner(s): Tran, Tan N
• Application Number:
  US13/911,177
• Publication Number:
  US 20140361368A1
• Time in Patent Office: 537 Days
• Field of Search: 438/153, 438/154, 438/157, 438/275, 438/933
• US Class Current: 438/275
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A method for forming a fin field-effect transistor (FinFET) device, comprises forming a plurality of silicon fins on a substrate, depositing silicon germanium (SiGe) on the plurality of fins, forming a gate region by forming a dummy gate stack on a predetermined area of the fins including the SiGe, removing the SiGe from an area of the fins not covered by the dummy gate stack, forming a merged region in the area of the fins not covered by the dummy gate stack to form a source drain region, removing the dummy gate stack to expose the remaining SiGe in the gate region, mixing the SiGe with the silicon fins in the gate region to form SiGe fins, and depositing a gate dielectric and gate metal on the SiGe fins.

Claims

1. A method for forming a fin field-effect transistor (FinFET) device, the method comprising:

forming a plurality of silicon fins on a substrate;

depositing silicon germanium (SiGe) on the plurality of fins;

forming a gate region by forming a dummy gate stack on a predetermined area of the fins including the SiGe;

removing the SiGe from an area of the fins not covered by the dummy gate stack;

forming a merged region in the area of the fins not covered by the dummy gate stack to form a source drain region;

removing the dummy gate stack to expose the remaining SiGe in the gate region;

mixing the SiGe with the silicon fins in the gate region to form SiGe fins; and

depositing a gate dielectric and gate metal on the SiGe fins.

2. The method according to claim 1, wherein forming the merged region comprises epitaxially growing at least one of silicon and SiGe on the fins not covered by the dummy gate stack.

3. The method according to claim 2, wherein the at least one of the silicon and SiGe is in-situ doped.

4. The method according to claim 3, wherein a doping level is about 1×

10²⁰ cm³ to about 1.5×

10²¹ cm³.

5. The method according to claim 3, further comprising diffusing a dopant from the merged region through the silicon fins to form junctions adjacent the SiGe fins.

6. The method according to claim 5, wherein spacers are formed adjacent the dummy gate stack and the junctions are formed under the spacers.

7. The method according to claim 1, the merged region is wrapped around the silicon fins in the source drain region.

8. The method according to claim 1, wherein the mixing comprises thermally mixing.

9. The method according to claim 8, wherein during thermal mixing a dopant is diffused from the merged region into the silicon fins to form junctions adjacent the SiGe fins.

10. The method according to claim 1, further comprising oxidizing the silicon in the remaining SiGe and driving in the remaining germanium into the fins in the gate region to form the SiGe fins.

11. The method according to claim 1, wherein mixing comprises thermal oxidation and oxide stripping.

12. The method according to claim 1, wherein the SiGe deposited on the plurality of fins comprises greater than or equal to about 40% germanium.

13. The method according to claim 1, wherein the SiGe fins comprise greater than or equal to 20% SiGe after mixing.

14. The method according to claim 1, further comprising:

forming a spacer adjacent the dummy gate stack between the dummy gate stack and the source drain region; and

removing the SiGe from an area of the fins not covered by the spacer.

15. The method according to claim 1, wherein a thickness of the SiGe deposited on the plurality of fins is about 2 nm.