Nitride semiconductor light-emitting element and method for fabricating the same

• US 8,895,419 B2
• Filed: 11/01/2013
• Issued: 11/25/2014
• Est. Priority Date: 07/06/2011
• Status: Expired due to Fees

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Anzue, Naomi, Yokogawa, Toshiya
• Primary Examiner(s): Lee, Calvin
• Application Number:
  US14/069,655
• Publication Number:
  US 20140054636A1
• Time in Patent Office: 389 Days
• Field of Search: 438/376, 438542-549, 257/486, 257/611, 257E21466-E21469
• US Class Current: 438/549
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

This nitride-based semiconductor light-emitting element includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, the nitride-based semiconductor multilayer structure having a growing plane which is an m-plane; and an electrode which is arranged on an Al_dGa_eN layer. The Al_dGa_eN layer is formed of a GaN-based semiconductor. The electrode includes Ag as the principal component and also includes Ge and at least one of Mg and Zn.

Claims

1. A method for fabricating a nitride semiconductor light-emitting element, the method comprising the steps of:

(a) providing a substrate;

(b) forming a nitride-based semiconductor multilayer structure including an n-type semiconductor region, an active layer, and a p-type semiconductor region on the substrate, the nitride-based semiconductor multilayer structure having a growing plane which is an m-plane;

(c) forming a p-side electrode on the growing plane of the p-type semiconductor region; and

(d) heating the nitride-based semiconductor multilayer structure after the step (c) has been performed to diffuse Ge in the p-side electrode so that the concentration of Ge becomes lower at an interface between the p-side electrode and the p-type semiconductor region than at the surface of the p-side electrode opposite from the p-type semiconductor region.

2. The method of claim 1, wherein the step (c) includes the steps of depositing at least one of Zn and Mg layers on the growing plane of the p-type semiconductor region and depositing an Ag alloy layer including Ge.

3. The method of claim 1, wherein the step (c) includes the steps of depositing a Ge layer on the growing plane of the p-type semiconductor region and depositing a Zn layer or an Mg layer.

4. The method of claim 1, wherein the step (c) includes the step of depositing an Ag alloy layer including Ge and at least one of Zn and Mg.

5. The method of claim 1, wherein the step (d) includes the step of heating the electrode at a temperature of not less than 400 degrees Celsius and not more than 600 degrees Celsius.

6. The method of claim 1, wherein the step (c) includes forming the electrode so that elements other than Ag, Mg, Zn, Ge and Ga that are included in the electrode have a concentration of 0.1 mass % or less in total.

7. A nitride semiconductor light-emitting element comprising:

an n-side electrode;

a nitride-based semiconductor multilayer structure including an n-type semiconductor region, an active layer and a p-type semiconductor region, the nitride-based semiconductor multilayer structure having a growing plane which is an m-plane; and

a p-side electrode which is arranged on the p-type semiconductor region,

wherein the p-type semiconductor region is formed of a GaN-based semiconductor,

the p-side electrode is formed of an alloy including Ag as the principal component and also including Ge and at least one of Mg and Zn,

Ge has been diffused in the alloy, and

the concentration of Ge is lower at an interface between the p-side electrode and the p-type semiconductor region than at the surface of the p-side electrode opposite from the p-type semiconductor region.

8. The nitride semiconductor light-emitting element of claim 7, wherein the p-side electrode includes Ag at a concentration of 50 mass % or more and also includes Mg, Zn and Ge at a concentration of 50 mass % or less in total.

9. The nitride semiconductor light-emitting element of claim 7, wherein the p-side electrode includes Ag at a concentration of 90 mass % or more and also includes Mg, Zn and Ge at a concentration of 10 mass % or less in total.

10. The nitride semiconductor light-emitting element of claim 7, wherein the p-side electrode includes Ge at a concentration of not less than 0.05 mass % and not more than 2.0 mass %.

11. The nitride semiconductor light-emitting element of claim 7, wherein at an interface between the p-side electrode and the p-type semiconductor region, either Mg or Zn has a higher concentration than Ge.

12. The nitride semiconductor light-emitting element of claim 7, wherein the p-side electrode includes Ga that has diffused from the p-type semiconductor region and the more distant from the interface with the p-type semiconductor region it is, the lower the concentration of Ga in the p-side electrode is.

13. The nitride semiconductor light-emitting element of claim 7, wherein the p-side electrode has a reflectance of 85% or more with respect to light having a wavelength of 450 nm.

14. The nitride semiconductor light-emitting element of claim 7, wherein the p-side electrode has a reflectance of 90% or more with respect to light having a wavelength of 520 nm.

15. The nitride semiconductor light-emitting element of claim 7, wherein the p-side electrode has a thickness of not less than 2 nm and not more than 500 nm.

16. The nitride semiconductor light-emitting element of claim 7, wherein the p-type semiconductor region is formed of an Al_xGa_yIn_zN, where x+y+z=1, x≧

0, y>

0 and z≧

0, semiconductor.

17. A light source comprising:

the nitride semiconductor light-emitting element of claim 7; and

a wavelength changing portion which includes a phosphor that changes the wavelength of light that has been emitted from the nitride semiconductor light-emitting element.

18. The nitride semiconductor light-emitting element of claim 7, wherein the p-side electrode includes elements other than Ag, Mg, Zn, Ge and Ga at a concentration of 0.1 mass % or less in total.

19. The nitride semiconductor light-emitting element of claim 18, wherein the elements include at least one element selected from the group consisting of Ni, Cu, Pd, In, Sn, Nd, Sm, Pt, Au and Bi.