Pixel array and image sensor including the same
First Claim
1. A pixel array comprising a plurality of pixels and having a pixel area and a logic area, each pixel comprising:
- a photoelectric conversion unit in the pixel area;
pixel-area transistors in the pixel area adjacent to the photoelectric conversion unit and comprising a reset transistor, a drive transistor, and a select transistor;
a first metal layer interconnecting the pixel area transistors, wherein the first metal layer comprises a reset signal, a select signal, a first gate connection connecting a gate of the select transistor to the select signal, and a second gate connection connecting a gate of the reset transistor to the reset signal;
a second metal layer over the first metal layer, wherein the second metal layer is an uppermost metal layer of the pixel area; and
a light reception unit over the second metal layer,wherein no metal layer exists between the second metal layer and the light reception unit, and no metal layer exists between the first metal layer and the second metal layer.
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Accused Products
Abstract
A pixel array and an image sensor including the pixel array having improved sensitivity and can drive pixels with high resolution, according to embodiments. In embodiments, a pixel array may include a plurality of pixels having a pixel area and a logic area. The pixel array may include at least one of: (1) A photoelectric conversion unit in the pixel area of each of the pixels. (2) A pixel-area transistor disposed at a side of the photoelectric conversion unit in the pixel area. (3) A metal-0 layer on the pixel-area transistor. (4) A metal-1 layer on and/or over the metal-0 layer. (5) A light reception unit on and/or over the metal-1 layer, with the metal-1 layer being the top metal layer in the pixel area.
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Citations
20 Claims
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1. A pixel array comprising a plurality of pixels and having a pixel area and a logic area, each pixel comprising:
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a photoelectric conversion unit in the pixel area; pixel-area transistors in the pixel area adjacent to the photoelectric conversion unit and comprising a reset transistor, a drive transistor, and a select transistor; a first metal layer interconnecting the pixel area transistors, wherein the first metal layer comprises a reset signal, a select signal, a first gate connection connecting a gate of the select transistor to the select signal, and a second gate connection connecting a gate of the reset transistor to the reset signal; a second metal layer over the first metal layer, wherein the second metal layer is an uppermost metal layer of the pixel area; and a light reception unit over the second metal layer, wherein no metal layer exists between the second metal layer and the light reception unit, and no metal layer exists between the first metal layer and the second metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An image sensor comprising:
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a pixel array comprising a plurality of pixels and having a pixel area and a logic area wherein each of the pixels comprises; a photoelectric conversion unit in the pixel area; pixel-area transistors in the pixel area adjacent to the photoelectric conversion unit and comprising a reset transistor, a drive transistor, and a select transistor; a first metal layer interconnecting the pixel area transistors, wherein the first metal layer connects (i) a gate of the select transistor to a corresponding select driver and (ii) a gate of the reset transistor to a corresponding reset driver; a second metal layer over the first metal layer, wherein the second metal layer comprises a drive signal and a third gate connection connecting a gate of the drive transistor to the drive signal, and the second metal layer is an uppermost metal layer of the pixel area; and a light reception unit over the second metal layer, wherein no metal layer exists between the second metal layer and the light reception unit, and no metal layer exists between the first metal layer and the second metal layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification