Methods for passivating a carbonic nanolayer

• US 8,895,950 B2
• Filed: 09/06/2013
• Issued: 11/25/2014
• Est. Priority Date: 10/23/2009
• Status: Active Grant

• Current Assignee: ZEON Corporation
• Original Assignee: Nantero Incorporated
• Inventors: Rueckes, Thomas, Manning, H. Montgomery, Sen, Rahul
• Primary Examiner(s): KUSUMAKAR, KAREN M
• Application Number:
  US14/020,095
• Publication Number:
  US 20140001433A1
• Time in Patent Office: 445 Days
• Field of Search: 257 1- 9
• US Class Current: 257/3
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02527 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H01L 21/02606 Nanotubes carbon nanotubes H10K85/211
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0669 Nanowires or nanotubes carbon nanotubes as material of solid-state device active part H10K85/211
• CPC Class Codes: H01L 29/1029 of field-effect transistors
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H10K 10/50 Bistable switching devices
• CPC Class Codes: H10K 10/88 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 71/12 using liquid deposition, e.g. spin coating
• CPC Class Codes: H10K 71/15 characterised by the solvent used
• CPC Class Codes: H10K 85/221 Carbon nanotubes
• CPC Class Codes: H10N 70/021 Formation of the switching material, e.g. layer deposition
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8845 Carbon or carbides
• CPC Class Codes: Y10S 977/842 for carbon nanotubes or fullerenes

Abstract

Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nanoscopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.

Claims

1. A carbonic nanolayer based device, comprising:

a carbonic nanolayer comprising a plurality of carbon structures, said carbonic nanolayer having a first side and a second side;

a material layer;

wherein said carbonic nanolayer and said material layer have longitudinal axes that are substantially parallel;

wherein at least a portion of said carbonic nanolayer is ordered to increase the density of carbon structures within at least said portion of said carbonic nanolayer; and

wherein said increased density within said portion of said carbonic nanolayer is selected such as to limit the encroachment of said material layer into said carbonic nanolayer.

2. The carbonic nanolayer based device of claim 1 wherein said carbonic nanolayer is comprised of a first sub-layer and a second sub-layer, the density of said first sub-layer being selected such as to limit the encroachment of said material layer into said second sub-layer.

3. The carbonic nanolayer based device of claim 1 wherein said carbon structures are carbon nanotubes.

4. The carbonic nanolayer based device of claim 3 wherein the density of said carbonic nanolayer is further increased by limiting the length of said carbon nanotubes.

5. The carbonic nanolayer based device of claim 4 wherein the length of said carbon nanotubes is less than about 500 nm.

6. The carbonic nanolayer based device of claim 3 wherein at least a portion of said carbon nanotubes are rafted.

7. The carbonic nanolayer based device of claim 1 wherein said carbonic nanolayer is formed via one of a spin coating process, a spray coating process, or a dip coating process.

8. The carbonic nanolayer based device of claim 1 wherein said carbon structures are selected from the group consisting of single wall carbon nanotubes, multi-wall carbon nanotubes, functionalized carbon nanotubes, oxidized carbon nanotubes, buckyballs, graphene sheets, nano-scopic graphene flecks, and graphene oxide.

9. The carbonic nanolayer based device of claim 1 wherein said material layer is in direct physical contact with said carbonic nanolayer.

10. The carbonic nanolayer based device of claim 1 wherein said material layer and said carbonic nanolayer are in different planes.

11. A nanotube switching device, comprising:

a first conductive element;

a second conductive element;

a nanotube fabric layer comprising a plurality of individual nanotube elements, said nanotube fabric layer having a first side and a second side;

wherein said first side of said nanotube fabric layer is electrical coupled to said first conductive element and said second side of said nanotube fabric layer is electrically coupled to said second conductive element;

wherein at least a portion of said nanotube fabric layer is ordered to increase the density of individual nanotube elements within at least said portion of said nanotube fabric layer; and

wherein said increased density within at least said portion of said nanotube fabric layer is selected such as to limit the encroachment of at least one of said first conductive element and said second conductive element into said nanotube fabric layer.

12. The nanotube switching device of claim 11 wherein the density of said nanotube fabric layer is further increased by limiting the length of said individual nanotube elements.

13. The nanotube switching device of claim 12 wherein the length of said individual nanotube elements is limited to about 0.4 μ

m.

14. The nanotube switching device of claim 11 wherein said nanotube fabric layer is deposited via a spin coating process.

15. The nanotube switching device of claim 11 wherein said nanotube fabric layer is deposited via a dip coating process.

16. The nanotube switching device of claim 11 wherein said nanotube fabric layer is deposited in such a way that at least a portion said plurality of individual nanotube elements are rafted.

17. The nanotube switching device of claim 11 wherein at least one of said first conductive element and said second conductive element is flexible.