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Light emitting diodes having group III nitride surface features defined by a mask and crystal planes

  • US 8,896,008 B2
  • Filed: 04/23/2013
  • Issued: 11/25/2014
  • Est. Priority Date: 04/23/2013
  • Status: Active Grant
First Claim
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1. Light Emitting Diode (LED) comprising:

  • a mesa that comprises a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure;

    an array of Group III Nitride truncated cones in the mesa face, at least two adjacent truncated cones in the array being spaced apart from one another; and

    a plurality of non-truncated cones between the at least two adjacent truncated cones that are spaced apart from one another.

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