Low offset vertical Hall device and current spinning method

• US 8,896,303 B2
• Filed: 06/27/2012
• Issued: 11/25/2014
• Est. Priority Date: 02/08/2011
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Ausserlechner, Udo, Motz, Mario
• Primary Examiner(s): LEDYNH, BOT L
• Application Number:
  US13/488,709
• Publication Number:
  US 20120286776A1
• Time in Patent Office: 881 Days
• Field of Search: 324/251
• US Class Current: 324/251
• CPC Class Codes: G01R 33/07 Hall effect devices
• CPC Class Codes: G01R 33/075 Hall devices configured for spinning current measurements
• CPC Class Codes: G01R 33/077 Vertical Hall-effect devices
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

One embodiment of the present invention relates to a vertical Hall-effect device. The device includes at least two supply terminals arranged to supply electrical energy to the first Hall-effect region; and at least one Hall signal terminal arranged to provide a first Hall signal from the first Hall-effect region. The first Hall signal is indicative of a magnetic field which is parallel to the surface of the semiconductor substrate and which acts on the first Hall-effect region. One or more of the at least two supply terminals or one or more of the at least one Hall signal terminal comprises a force contact and a sense contact.

Claims

1. A vertical Hall-effect sensor system disposed on a semiconductor substrate, comprising:

a first conductive Hall-effect region arranged beneath a surface of the semiconductor substrate;

at least two supply terminals arranged to supply electrical energy to the first Hall-effect region;

at least one Hall signal terminal arranged to provide a first Hall signal from the first Hall-effect region, the first Hall signal being indicative of a magnetic field which is parallel to the surface of the semiconductor substrate and which acts on the first Hall-effect region;

wherein one or more of the at least two supply terminals or one or more of the at least one Hall signal terminal comprises a force contact and a sense contact; and

a feedback control circuit comprising;

an output connected to the force contact and having a first impedance,

an input connected to the sense contact and having a second impedance, the second impedance being higher than the first impedance, and

a feedback loop to adjust a potential on the output of the feedback control circuit until a potential on the input of the feedback control circuit is equal to a reference potential.

2. The vertical Hall-effect sensor of claim 1, wherein the reference potential is a predetermined reference potential.

3. The vertical Hall-effect sensor of claim 1, wherein the reference potential corresponds to a potential measured on a sense contact.

4. The vertical Hall-effect sensor of claim 1, wherein the at least two supply terminals and the at least one Hall signal terminal comprise respective force contacts and respective sense contacts.

5. The vertical Hall-effect sensor of claim 4, wherein the feedback circuit concurrently applies different reference potentials to the respective force contacts while using the respective sense contacts to monitor the respective potentials applied to the respective force contacts.

6. The vertical Hall-effect sensor of claim 1, wherein respective supply terminals and respective Hall signal terminals comprise respective force contacts and respective sense contacts, and wherein the feedback circuit concurrently applies at least three different reference potentials to the respective sense contacts.

7. The vertical Hall-effect sensor of claim 1, where the first Hall signal is derived from current flowing to or from the force contact.

8. The vertical Hall-effect sensor of claim 1, where the vertical Hall-effect sensor is operated in a spinning current scheme that repetitively swaps supply and Hall signal terminals during operation.

9. The vertical Hall-effect sensor of claim 1, further comprising:

a second conductive Hall-effect region arranged beneath the semiconductor substrate surface and separated from the first conductive Hall effect region by an isolation structure;

at least two supply terminals arranged to supply electrical energy to the second Hall-effect region;

at least one Hall signal terminal arranged to provide a second Hall signal from the second Hall-effect region, the second Hall signal being indicative of the magnetic field acting on the second Hall-effect region; and

wherein a magnetic field value is derived by taking a difference between the first and second Hall signals.