Method for manufacturing semiconductor device including oxide semiconductor film
First Claim
1. A method for manufacturing a semiconductor device, comprising:
- forming a gate electrode layer over a substrate having an insulating surface;
forming a gate insulating layer over the gate electrode layer;
forming an oxide semiconductor layer over the gate insulating layer;
heating the oxide semiconductor layer in an oxygen atmosphere after the step of forming the oxide semiconductor layer;
forming a source electrode layer over the oxide semiconductor layer;
forming a drain electrode layer over the oxide semiconductor layer;
forming an oxide insulating layer which is in contact with part of the oxide semiconductor layer, over the gate insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and
performing a heat treatment in an oxygen atmosphere or an inert gas atmosphere after the step of forming the oxide insulating layer.
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Accused Products
Abstract
A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.
161 Citations
38 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; heating the oxide semiconductor layer in an oxygen atmosphere after the step of forming the oxide semiconductor layer; forming a source electrode layer over the oxide semiconductor layer; forming a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating layer which is in contact with part of the oxide semiconductor layer, over the gate insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and performing a heat treatment in an oxygen atmosphere or an inert gas atmosphere after the step of forming the oxide insulating layer. - View Dependent Claims (5, 6, 7, 8, 9, 10)
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2. A method for manufacturing a semiconductor device, comprising:
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forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; heating the oxide semiconductor layer in an oxygen atmosphere, so that the oxide semiconductor layer is dehydrated or dehydrogenated after the step of forming the oxide semiconductor layer; forming a source electrode layer over the oxide semiconductor layer; forming a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating layer which is in contact with part of the oxide semiconductor layer, over the gate insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and performing a heat treatment in an oxygen atmosphere or an inert gas atmosphere after the step of forming the oxide insulating layer. - View Dependent Claims (11, 12, 13)
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3. A method for manufacturing a semiconductor device, comprising:
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forming an oxide semiconductor layer over an insulating layer; heating the oxide semiconductor layer in an oxygen atmosphere after the step of forming the oxide semiconductor layer; forming a source electrode layer over the oxide semiconductor layer; forming a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating layer which is in contact with part of the oxide semiconductor layer, over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and performing a heat treatment in an oxygen atmosphere or an inert gas atmosphere after the step of forming the oxide insulating layer. - View Dependent Claims (14, 15, 16)
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4. A method for manufacturing a semiconductor device, comprising:
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forming an oxide semiconductor layer over an insulating layer; heating the oxide semiconductor layer in an oxygen atmosphere, so that the oxide semiconductor layer is dehydrated or dehydrogenated after the step of forming the oxide semiconductor layer; forming a source electrode layer over the oxide semiconductor layer; forming a drain electrode layer over the oxide semiconductor layer; forming an oxide insulating layer which is in contact with part of the oxide semiconductor layer, over the insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and performing a heat treatment in an oxygen atmosphere or an inert gas atmosphere after the step of forming the oxide insulating layer. - View Dependent Claims (17, 18, 19)
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20. A method for manufacturing a semiconductor device, comprising:
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forming a first gate electrode over a substrate having an insulating surface; forming a gate insulating layer over the first gate electrode; forming an oxide semiconductor layer over the gate insulating layer; heating the oxide semiconductor layer in an oxygen atmosphere after the step of forming the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer, wherein each of the source electrode layer and the drain electrode layer is in electrical contact with the oxide semiconductor layer; forming an oxide insulating layer over the source electrode layer and the drain electrode layer, wherein the oxide insulating layer is in contact with a portion of the oxide semiconductor layer between the source electrode layer and the drain electrode layer; performing a heat treatment in an oxygen atmosphere after the step of forming the oxide insulating layer; and forming a second gate electrode over the oxide insulating layer, wherein the second gate electrode overlaps with the first gate electrode and the oxide semiconductor layer. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28)
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29. A method for manufacturing a semiconductor device, comprising:
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forming a first gate electrode over a substrate having an insulating surface; forming a gate insulating layer over the first gate electrode; forming an oxide semiconductor layer over the gate insulating layer; heating the oxide semiconductor layer in an oxygen atmosphere after the step of forming the oxide semiconductor layer; forming an oxide insulating layer over the oxide semiconductor layer, forming a source electrode layer and a drain electrode layer over the oxide insulating layer, wherein each of the source electrode layer and the drain electrode layer is in electrical contact with the oxide semiconductor layer; forming an insulating layer over and in contact with the oxide insulating layer, the source electrode layer, and the drain electrode layer; performing a heat treatment in an oxygen atmosphere after the step of forming the oxide insulating layer; and forming a second gate electrode over the insulating layer, wherein the second gate electrode overlaps with the first gate electrode and the oxide semiconductor layer. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38)
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Specification